AUIRF3710Z International Rectifier, AUIRF3710Z Datasheet - Page 6

• Manufacturer Part Number: AUIRF3710Z
• Description: MOSFET N-CH 100V 59A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3710Z

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 160 W
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.001
0.01
0.1
10
60
50
40
30
20
10
1
1E-006
0
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.05
0.10
0.02
0.01
50
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
0.0001
t 1 , Rectangular Pulse Duration (sec)
150
175
0.001
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 10. Normalized On-Resistance
-60 -40 -20 0
I D = 59A
V GS = 10V
0.01
T J , Junction Temperature (°C)
vs. Temperature
20 40 60 80 100 120 140 160 180
0.1
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