AUIRF6215 International Rectifier, AUIRF6215 Datasheet - Page 2

• Manufacturer Part Number: AUIRF6215
• Description: MOSFET P-CH 150V 13A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF6215

• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 0.29ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 110W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 290 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 11 W
• Mounting Style: Through Hole
• Gate Charge Qg: 44 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Notes:
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
(BR)DSS
/∆T
Ω
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
-150
–––
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
ƒ
„
…
-0.20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
860
220
130
–––
–––
–––
160
4.5
7.5
1.2
I
R
14
36
53
37
SD
θ
≤
≤
is measured at TJ approximately 90°C.
0.29
0.58
-250
-100
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
240
-25
8.1
-13
-44
1.7
66
35
≤
V/°C
µA
nA
nC
nH
pF
nC
ns
ns
Ω
V
V
S
A
V
≤
Between lead,
from package
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
6mm (0.25in.)
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= -6.6A
= -6.6A
= 25°C, I
= 25°C, I
= 12 Ω, See Fig. 10
= 6.8 Ω
= 0V, I
= -10V, I
= -10V, I
= V
= -50V, I
= -150V, V
= -120V, V
= 20V
= -20V
= -120V
= -10V, See Fig. 6 & 13
= -75V
= 0V
= -25V
GS
, I
D
Conditions
Conditions
Conditions
D
S
F
≤
= -250µA
D
D
D
= -250µA
= -6.6A
= -6.6A, V
≤
= -6.6A
= -6.6A
= -6.6A
GS
GS
f
= 0V
= 0V, T
D
G
= -1mA
f
f
GS
,T
,T
J
G
J
J
= 150°C
= 0V
=25°C
=150°C
f
D
S
S
D
f