AUIRF1010ZL International Rectifier, AUIRF1010ZL Datasheet - Page 9

• Manufacturer Part Number: AUIRF1010ZL
• Description: MOSFET N-CH 55V 94A TO262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010ZL

• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-262
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 7.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 63 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com

‚
+
-
D.U.T
ƒ
Fig 17.
+
-
•
•
•
•
SD
•
•
•
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
„
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
t
f
SD
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
9