AUIRF1010EZS International Rectifier, AUIRF1010EZS Datasheet - Page 7

• Manufacturer Part Number: AUIRF1010EZS
• Description: MOSFET N-CH 60V 84A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010EZS

• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 84A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0068ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 140W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
D.U.T
.3µF
0.01 Ω
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
400
350
300
250
200
150
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
0
-75 -50 -25
25
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
50
I D = 250µA
T J , Temperature ( °C )
vs. Drain Current
0
75
25
100
50
75
TOP
BOTTOM 51A
125
100 125 150 175
150
I D
5.7A
9.1A
175
7