AUIRF7736M2TR1 International Rectifier, AUIRF7736M2TR1 Datasheet - Page 5

• Manufacturer Part Number: AUIRF7736M2TR1
• Description: MOSFET N-CH 40V 179A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7736M2TR1

• Input Capacitance (ciss) @ Vds: 4267pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 mOhm @ 65A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 179A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.0025ohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: DirectFET M4
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 2.5 W
• Gate Charge Qg: 72 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 9. Typical Forward Transconductance Vs. Drain Current
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250
200
150
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
50
14
12
10
0
8
6
4
2
0
-75 -50 -25
0
0
I D = 1.0A
ID = 1.0mA
ID = 250µA
ID = 150µA
I D = 65A
20
I D ,Drain-to-Source Current (A)
20
Q G , Total Gate Charge (nC)
T J = 25°C
T J , Temperature ( °C )
0
V DS = 32V
V DS = 20V
VDS= 8V
40
25 50 75 100 125 150 175
V DS = 5V
380µs PULSE WIDTH
40
60
T J = 175°C
60
80
80
100
120
100
Fig 12. Maximum Drain Current vs. Case Temperature
100000
10000
1000
Fig 8. Typical Source-Drain Diode Forward Voltage
1000
100
120
100
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
1.0
10
80
60
40
20
0
0.3
25
1
T J = -40°C
TJ = 25°C
TJ = 175°C
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
50
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
T C , Case Temperature (°C)
C iss
C oss
C rss
75
0.7
100
f = 1 MHZ
10
0.9
125
V GS = 0V
1.1
150
175
100
1.3
5