AUIRF1405ZL International Rectifier, AUIRF1405ZL Datasheet - Page 2

• Manufacturer Part Number: AUIRF1405ZL
• Description: MOSFET N-CH 55V 150A TO262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1405ZL

• Input Capacitance (ciss) @ Vds: 4780pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
2
g
gs
gd
rr
Repetitive rating; pulse width limited by
R
recommended for use above this value.
Pulse width
C
charging time as C
V
(BR)DSS
max. junction temperature. (See fig. 11).
Limited by T
DSS
G
oss
eff.
= 25 , I
eff. is a fixed capacitance that gives the same
.
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 75A, V
1.0ms; duty cycle
, starting T
oss
Parameter
while V
GS
=10V. Part not
Parameter
J
™
= 25°C, L = 0.10mH
DS
is rising from 0 to 80%
2%.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
88
…
†
‡
Limited by T
repetitive avalanche performance.
This value determined from sample failure population,
starting T
V
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
GS
0.049
4780
2730
–––
–––
–––
–––
–––
–––
–––
120
110
770
410
600
910
–––
–––
–––
3.7
4.5
7.5
31
46
18
48
82
30
30
=10V.
J
-200
–––
–––
–––
250
200
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
600
4.9
4.0
1.3
= 25°C, L = 0.10mH, R
20
75
46
45
Jmax
, see Fig.12a, 12b, 15, 16 for typical
V/°C
m
µA
nA
nC
nH
pF
nC
ns
ns
V
V
S
A
V
2
Pak, when mounted on 1" square PCB
Between lead,
from package
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
6mm (0.25in.)
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 4.4
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 25V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
G
D
e
e
Conditions
Conditions
= 25 , I
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A, V
= 75A
= 75A, V
= 75A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
AS
D
e
= 1mA
DD
= 75A,
G
GS
J
= 125°C
= 25V
= 0V
G
f
e
D
S
S
D