AUIRFS4310TRR International Rectifier, AUIRFS4310TRR Datasheet - Page 2

• Manufacturer Part Number: AUIRFS4310TRR
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFS4310TRR

• Input Capacitance (ciss) @ Vds: 7670pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static Electrical Characteristics @ T
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
Notes:

‚
ƒ
„
…
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
rr
Calculated continuous current based on maximum allowable
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
R
above this value.
I
Pulse width
2
(BR)DSS
junction temperature. Package limitation current is 75A
SD
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
= 25 , I
75A, di/dt
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
400µs; duty cycle
= 75A, V
, starting T
550A/µs, V
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.35mH
DD
di
V
2%.
Parameter
Parameter
(BR)DSS
, T
J
J
= 25°C (unless otherwise specified)
175°C.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
†
‡
ˆ
‰
100
––– 0.064 –––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 720.1 –––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
C
as C
C
C
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at T
oss
oss
oss
oss
while V
7670
eff. (TR) is a fixed capacitance that gives the same charging time
eff. (ER) is a fixed capacitance that gives the same energy as
–––
–––
–––
–––
–––
–––
–––
170
110
540
280
650
–––
–––
–––
120
5.6
1.4
3.3
46
62
26
68
78
45
55
82
while V
DS
130
-200
–––
–––
–––
250
200
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
550
120
180
–––
7.0
4.0
1.3
20
68
83
is rising from 0 to 80% V
DS
™
is rising from 0 to 80% V
J
V/°C
m
approximately 90°C.
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
f = 1MHz, open drain
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.6
= V
= 50V, I
= 100V, V
= 100V, V
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
DSS
D
g
g
D
S
DS
DS
D
D
= 250µA
DSS
= 75A, V
.
= 250µA
= 75A
= 75A
GS
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 75A
g
D
= 85V,
GS
= 1mA
J
= 0V
= 125°C
i
h
www.irf.com
d
, See Fig.11
, See Fig. 5
g
G
g
D
S