AUIRF3805S International Rectifier, AUIRF3805S Datasheet - Page 4

• Manufacturer Part Number: AUIRF3805S
• Description: MOSFET N-CH 55V 160A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3805S

• Input Capacitance (ciss) @ Vds: 7960pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 210 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 190 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000.0
4
100.0
1000
10.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1.0
0.1
10
1
4.0
0.1
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5.0
T J = 25°C
1
4.5V
V DS = 20V
60µs PULSE WIDTH
6.0
Tj = 25°C
60µs PULSE WIDTH
10
TOP
BOTTOM
7.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
1000
200
160
120
100
80
40
10
0
0.1
0
Vs. Drain Current
20
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
40
4.5V
60
1
V DS = 10V
380µs PULSE WIDTH
80 100 120 140 160 180
Tj = 175°C
60µs PULSE WIDTH
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10
TOP
BOTTOM
T J = 175°C
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100