AUIRF3805L-7P International Rectifier, AUIRF3805L-7P Datasheet - Page 2
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AUIRF3805L-7P
Manufacturer Part Number
AUIRF3805L-7P
Description
MOSFET N-CH 55V 160A TO262-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF3805L-7P.pdf
(14 pages)
Specifications of AUIRF3805L-7P
Input Capacitance (ciss) @ Vds
7820pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-262-7
Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.002ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
300W
Operating
RoHS Compliant
Configuration
Single Quint Source
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
130 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF3805L-7P
Manufacturer:
IR
Quantity:
12 500
Notes:
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure
population starting T
R
Pulse width
C
V
charging time as C
80% V
DSS
G
oss
eff.
= 25 , I
SMD
/ T
eff. is a fixed capacitance that gives the same
DSS
J
.
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 140A,V
1.0ms; duty cycle
Parameter
oss
J
while V
= 25°C, L=0.043mH,
GS
Ã
=10V.
Parameter
Parameter
DS
is rising from 0 to
2%.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is measured at T
Solder mounted on IMS substrate.
Limited by T
R
use above this value.
G
= 25 , I
7820
1260
4310
1540
0.05
–––
–––
–––
–––
–––
–––
–––
130
130
610
980
–––
–––
–––
2.0
4.5
7.5
53
49
23
80
52
45
35
1000
-200
AS
–––
–––
–––
250
200
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
2.6
4.0
1.3
J
20
68
53
max starting T
= 140A,V
V/°C
m
2
nC
nH
nC
µA
nA
pF
ns
ns
Pak, when mounted on 1" square PCB
V
V
S
A
V
J
of approximately 90°C.
GS
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
=10V.Part not recommended for
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 140A
= 140A
J
= 25°C, I
= 25°C, I
= 2.4
= 25°C, L=0.043mH,
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 140A, V
= 140A, V
= 140A
= 140A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
D
e
G
= 1mA
J
GS
DD
= 125°C
G
= 28V
= 0V
S
D
e
S
D