AUIRF3805L-7P International Rectifier, AUIRF3805L-7P Datasheet - Page 2

• Manufacturer Part Number: AUIRF3805L-7P
• Description: MOSFET N-CH 55V 160A TO262-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3805L-7P

• Input Capacitance (ciss) @ Vds: 7820pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-262-7
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 240A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.002ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 300W
• Operating: RoHS Compliant
• Configuration: Single Quint Source
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 240 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 130 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure
population starting T
R
Pulse width
C
V
charging time as C
80% V
DSS
G
oss
eff.
= 25 , I
SMD
/ T
eff. is a fixed capacitance that gives the same
DSS
J
.
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 140A,V
1.0ms; duty cycle
Parameter
oss
J
while V
= 25°C, L=0.043mH,
GS
Ù
=10V.
Parameter
Parameter
DS
is rising from 0 to
2%.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is measured at T
Solder mounted on IMS substrate.
Limited by T
R
use above this value.
G
= 25 , I
7820
1260
4310
1540
0.05
–––
–––
–––
–––
–––
–––
–––
130
130
610
980
–––
–––
–––
2.0
4.5
7.5
53
49
23
80
52
45
35
1000
-200
AS
–––
–––
–––
250
200
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
2.6
4.0
1.3
J
20
68
53
max starting T
= 140A,V
V/°C
m
2
nC
nH
nC
µA
nA
pF
ns
ns
Pak, when mounted on 1" square PCB
V
V
S
A
V
J
of approximately 90°C.
GS
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
=10V.Part not recommended for
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 140A
= 140A
J
= 25°C, I
= 25°C, I
= 2.4
= 25°C, L=0.043mH,
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 140A, V
= 140A, V
= 140A
= 140A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
D
e
G
= 1mA
J
GS
DD
= 125°C
G
= 28V
= 0V
S
D
e
S
D