STF34NM60N STMicroelectronics, STF34NM60N Datasheet - Page 5

• Manufacturer Part Number: STF34NM60N
• Description: MOSFET N-CH 600V 29.0A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF34NM60N

• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STF34NM60N, STP34NM60N, STW34NM60N
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17740 Rev 3
I
I
di/dt=100 A/µs
(see
I
di/dt=100 A/µs,
T
(see
SD
SD
SD
J
= 150 °C
Test conditions
= 29 A, V
= 29 A, V
= 29 A,V
Figure
Figure
20)
20)
DD
GS
DD
= 60 V
= 0
= 60 V
Electrical characteristics
Min.
-
-
-
-
Typ.
408
480
39
10
42
8
Max.
116
1.6
29
Unit
nC
nC
ns
ns
A
A
V
A
A
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