FGH40N60SMDF Fairchild Semiconductor, FGH40N60SMDF Datasheet - Page 4

• Manufacturer Part Number: FGH40N60SMDF
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMDF

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMDF Rev. B1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
120
100
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
25
0
0
T
Common Emitter
V
T
T
C
Collector-EmitterCase Temperature, T
Common Emitter
V
Characteristics
Temperature at Variant Current Level
C
C
GE
= 25
GE
= 25
= 175
= 15V
= 15V
50
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
C
o
C
o
C
1
75
2
15V
20V
100
2
12V
I
C
125
4
40A
= 20A
80A
CE
CE
3
V
[V]
[V]
150
GE
C
= 8V
[
10V
o
C]
175
6
4
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
120
100
120
Figure 4. Transfer Characteristics
90
60
30
80
60
40
20
20
16
12
0
0
8
4
0
0
0
4
T
Common Emitter
V
T
T
C
C
C
CE
I
C
= 25
= 175
= 175
= 20A
= 20V
40A
o
2
Collector-Emitter Voltage, V
C
o
o
C
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
8
4
2
80A
15V
20V
12
6
Common Emitter
T
4
8
C
GE
12V
GE
= -40
16
CE
[V]
[V]
V
[V]
o
10
C
GE
= 8V
GE
10V
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12
20
6