FGH60N60SMD Fairchild Semiconductor, FGH60N60SMD Datasheet - Page 5

• Manufacturer Part Number: FGH60N60SMD
• Description: IGBT 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SMD Rev. A1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
20
16
12
7000
6000
5000
4000
3000
2000
1000
0.01
8
4
0
300
100
0.1
10
4
1
0
0.1
1
I
C
= 30A
*Notes:
60A
1. T
2. T
3. Single Pulse
Collector-Emitter Voltage, V
C
J
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
= 175
= 25
8
o
C
o
C
10
120A
1
12
DC
10 ms
Common Emitter
V
T
GE
C
Common Emitter
T
1ms
100
C
C
C
C
= 25
oes
res
= 0V, f = 1MHz
GE
ies
= 25
CE
100
16
o
[V]
CE
C
[V]
o
GE
μ
10
C
s
[V]
10
μ
s
1000
30
20
5
Figure 8. Saturation Voltage vs. V
100
80
60
40
20
10
20
16
12
15
12
Figure 10. Gate charge Characteristics
8
4
0
9
6
3
0
Figure 12. Turn-on Characteristics vs.
0
4
0
Common Emitter
T
I
C
C
60A
= 30A
= 25
o
10
40
C
Gate-Emitter Voltage, V
8
t
t
r
Gate Resistance, R
d(on)
Gate Resistance
Gate Charge, Q
120A
20
80
V
12
CC
Common Emitter
V
I
T
T
C
= 200V
CC
C
C
= 60A
120
= 25
= 175
30
= 400V, V
g
Common Emitter
T
[nC]
400V
C
o
G
C
o
= 175
GE
[
C
Ω
16
[V]
]
300V
160
GE
o
40
C
= 15V
GE
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20
200
50