BLF7G27LS-150P,112 NXP Semiconductors, BLF7G27LS-150P,112 Datasheet - Page 10
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BLF7G27LS-150P,112
Manufacturer Part Number
BLF7G27LS-150P,112
Description
TRANS LDMOS SOT539B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-150P118.pdf
(14 pages)
Specifications of BLF7G27LS-150P,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.5GHz ~ 2.7GHz
Gain
16.5dB
Current Rating
37A
Current - Test
1.2A
Voltage - Test
28V
Power - Output
30W
Package / Case
*
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
37 A
Maximum Operating Temperature
+ 225 C
Forward Transconductance Gfs (max / Min)
0.86 S
Resistance Drain-source Rds (on)
0.14 Ohms
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
NXP Semiconductors
Fig 16. Package outline SOT539B
BLF7G27L-150P_7G27LS-150P
Product data sheet
Earless flanged balanced LDMOST ceramic package; 4 leads
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
mm
Unit
SOT539B
Outline
version
(1)
max
nom
max
nom
min
min
H
0.185
0.165
L
4.7
4.2
A
U
A
11.81
11.56
0.465
0.455
2
b
0.007
0.004
0.18
0.10
IEC
c
31.55
30.94
1.242
1.218
D
31.52
30.96
1.241
1.219
D
1
1
3
BLF7G27L-150P; BLF7G27LS-150P
JEDEC
0.374
0.366
All information provided in this document is subject to legal disclaimers.
9.5
9.3
E
References
0.375
0.365
9.53
9.27
Rev. 1 — 12 November 2010
E
D
U
H
1
D
5
e
1
1
1
13.72
0
0.54
e
JEITA
0.069
0.059
1.75
1.50
scale
F
2
4
b
5
17.12
16.10
0.674
0.634
H
10 mm
25.53
25.27
1.005
0.995
H
1
0.137
0.117
3.48
2.97
w
L
3
D
0.089
0.079
F
2.26
2.01
Q
w
2
32.77
32.13
1.275
1.265
U
D
1
European
projection
10.29
10.03
0.405
0.395
U
Power LDMOS transistor
2
E
1
0.25
0.01
w
2
Q
© NXP B.V. 2010. All rights reserved.
0.25
0.01
w
3
c
Issue date
09-10-16
10-02-02
sot539b_po
E
SOT539B
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