BLF7G22L-250P,112 NXP Semiconductors, BLF7G22L-250P,112 Datasheet
BLF7G22L-250P,112
Specifications of BLF7G22L-250P,112
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BLF7G22L-250P,112 Summary of contents
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... BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7 0.01 % probability on CCDF. ...
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... BLF7G22LS-250P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...
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... P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF7G22L-250P and BLF7G22LS-250P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C unless otherwise specified. ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 1. Package outline SOT539A BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P scale D 1 ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 2. Package outline SOT539B BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P scale 31.52 9 ...
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... VSWR W-CDMA 10. Revision history Table 9. Revision history Document ID BLF7G22L-250P_22LS-250P_1 BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G22L-250P_22LS-250P_1 Objective data sheet BLF7G22L-250P; BLF7G22LS-250P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 6 May 2010 Document identifier: BLF7G22L-250P_22LS-250P_1 ...