BFG540W/XR,135 NXP Semiconductors, BFG540W/XR,135 Datasheet - Page 2

• Manufacturer Part Number: BFG540W/XR,135
• Description: TRANS RF NPN 9GHZ 15V SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/XR,135

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5821-2; BFG540W/XR,135

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers, satellite
television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
QUICK REFERENCE DATA
2000 May 23
V
V
I
P
h
C
f
G
|s
F
SYMBOL
C
T
FE
excellent reliability.
CBO
CES
tot
NPN 9 GHz wideband transistor
re
21
UM
|
2
collector-base voltage
collector-emitter voltage R
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
open emitter
T
I
I
I
I
I
I

C
C
C
C
C
C
s
s
BE
MARKING
PINNING
= 40 mA; V
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
 85 C
 
BFG540W
BFG540W/X
BFG540W/XR
BFG540W (see Fig.1)
BFG540W/X (see Fig.1)
BFG540W/XR (see Fig.2)
TYPE NUMBER
= 0
PIN
opt
1
2
3
4
1
2
3
4
1
2
3
4
; I
CB
C
= 8 V; f = 1 MHz
= 10 mA; V
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
CE
CE
CE
CE
CE
= 8 V
= 8 V; f = 1 GHz; T
= 8 V; f = 900 MHz; T
= 8 V; f = 2 GHz; T
= 8 V; f = 900 MHz; T
CONDITIONS
DESCRIPTION
2
CE
= 8 V; f = 2 GHz
CODE
N8
N9
N7
BFG540W/X; BFG540W/XR
amb
amb
amb
amb
= 25 C
= 25 C
halfpage
= 25 C
= 25 C
lfpage




100



14

MIN. TYP. MAX. UNIT
Fig.1 SOT343N.
Fig.2 SOT343R.
3
2
Top view
4
1
Top view
Product specification




120
0.5
9
16
10
15
2.1
BFG540W
MSB842
20
15
120
500
250






4
1
3
2
MBK523
V
V
mA
mW
pF
GHz
dB
dB
dB
dB