BTA316-800ET,127 NXP Semiconductors, BTA316-800ET,127 Datasheet - Page 7
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BTA316-800ET,127
Manufacturer Part Number
BTA316-800ET,127
Description
TRIAC 600V 16A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA316-800ET127.pdf
(14 pages)
Specifications of BTA316-800ET,127
Package / Case
TO-220-3
Current - On State (it (rms)) (max)
16A
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
140A, 150A
Voltage - Gate Trigger (vgt) (max)
1.5V
Rated Repetitive Off-state Voltage Vdrm
800 V
On-state Rms Current (it Rms)
16 A
Gate Trigger Voltage (vgt)
0.8 V to 1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5225
NXP Semiconductors
6. Characteristics
Table 6.
BTA316-800ET
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on
time
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dV
V
dV
condition; gate open circuit
V
dV
I
dI
All information provided in this document is subject to legal disclaimers.
T
TM
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
DM
D
D
D
G
= 18 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
com
com
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 400 V; T
= 400 V; T
= 20 A; V
400 V; T
Figure 11
Figure 11
= 536 V; T
/dt = 10 V/µs; gate open circuit
/dt = 20 V/µs; "without snubber"
/dt = 1 V/µs; gate open circuit
Rev. 02 — 1 December 2010
j
T
T
T
G
G
G
T
j
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T
= 25 °C; see
= 150 °C; I
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
j
j
= 0.1 A; T
= 150 °C
= 150 °C; I
= 150 °C; I
= 800 V; I
j
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
= 150 °C; exponential
j
T(RMS)
= 25 °C;
j
G
= 150 °C;
T(RMS)
T(RMS)
Figure 10
= 0.1 A;
Figure 9
= 16 A;
= 16 A;
= 16 A;
BTA316-800ET
Min
-
-
-
-
-
-
-
-
-
0.25
-
20
1.2
0.8
6
-
Typ
-
-
-
-
-
-
-
1.3
0.8
-
0.4
-
-
-
-
2
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
Max
10
10
10
25
30
30
15
1.5
1.5
-
2
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
A/ms
A/ms
µs
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