CSPEMI307AG ON Semiconductor, CSPEMI307AG Datasheet - Page 5

• Manufacturer Part Number: CSPEMI307AG
• Description: IC EMI FILTER 4CH ESD 4CH 15CSP
• Manufacturer: ON Semiconductor

Specifications of CSPEMI307AG

• Resistance (ohms): 100
• Capacitance: 30pF
• Power (watts): 0.1W, 1/10W
• Package / Case: 15-CSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -

CSPEMI307A
SYMBOL
V
TCR
TCC
V
I
V
V
DIODE
LEAK
R
C
f
ESD
SIG
C
CL
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
Note 4: Unused pins are left open.
PARAMETER
Resistance
Capacitance
Temperature Coefficient of Resistance
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
In-system ESD Withstand Voltage
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Cut-off frequency
Z
SOURCE
a) Human Body Model, MIL-STD-883,
b) Contact Discharge per IEC 61000-4-2
A2, then clamping voltage is measured at Pin C2.
Positive Clamp
Negative Clamp
Positive Transients
Negative Transients
A
Method 3015
Level 4
=25
= 50 Ω , Z
°
C unless otherwise specified.
LOAD
= 50 Ω
ELECTRICAL OPERATING CHARACTERISTICS
Rev. 2 | Page 5 of 12 | www.onsemi.com
CONDITIONS
At 2.5V DC
At 2.5V DC
I
V
I
Notes 2 and 4
Notes 2,3 and 4
R = 100 Ω , C = 30pF
DIODE
LOAD
DIODE
=10 µ A
= 10mA
=3.3V
MIN
-0.4
± 30
± 15
5.5
5.6
80
24
1200
-300
TYP
100
-0.8
+10
6.8
- 5
30
64
1
MAX
120
100
-1.5
9.0
36
ppm/° C
ppm/° C
UNITS
MHz
pF
nA
kV
kV
Ω
V
V
V
V
V