PT19-21C/L41/TR8 Everlight Electronics CO., LTD, PT19-21C/L41/TR8 Datasheet - Page 2

Photodetector Transistors Phototransistor 940nm, 75mW

PT19-21C/L41/TR8

Manufacturer Part Number
PT19-21C/L41/TR8
Description
Photodetector Transistors Phototransistor 940nm, 75mW
Manufacturer
Everlight Electronics CO., LTD
Datasheet

Specifications of PT19-21C/L41/TR8

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
30 V
Collector-emitter Breakdown Voltage
30 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Wavelength
940 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Package Dimensions
Notes: 1.All dimensions are in millimeters
Absolute Maximum Ratings (Ta=25℃)
Notes: *1:Soldering time≦5 seconds.
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Everlight Electronics Co., Ltd.
Device No:DTT-019-034
2.Tolerances unless dimensions ±0.1mm
Parameter
Symbol
V
V
T
T
T
P
I
CEO
ECO
opr
stg
sol
C
c
http:\\www.everlight.com
Prepared date:07-25-2005
-25 ~ +85
-40 ~ +85
Rating
260
30
20
75
5
Emitter
Collector
Units
mW
mA
V
V
Rev 2
Prepared by:Jaine Tsai
PT19-21C/L41/TR8
Page: 2 of 10

Related parts for PT19-21C/L41/TR8