ZXMN6A08GTA Diodes Inc, ZXMN6A08GTA Datasheet

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ZXMN6A08GTA

Manufacturer Part Number
ZXMN6A08GTA
Description
MOSFET Power 60V 3.8A N-Channel MOSFET
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN6A08GTA

Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.3 A
Power Dissipation
3900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A08GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Company:
Part Number:
ZXMN6A08GTA
Quantity:
3 000
Company:
Part Number:
ZXMN6A08GTA
Quantity:
3 000
ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A08
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
V
60
Device
ZXMN6A08GTA
ZXMN6A08GTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
0.150 @ V GS = 4.5V
0.080 @ V GS = 10V
R
DS(on)
( )
Reel size
(inches)
13
7
I
D
5.3
2.8
Tape width
(A)
(mm)
12
12
1
Quantity per
1,000
4,000
reel
D
Pinout - top view
www.zetex.com
G
D
S
G
S
D

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ZXMN6A08GTA Summary of contents

Page 1

... Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A08GTA ZXMN6A08GTC Device marking ZXMN 6A08 Issue 1 - May 2006 © Zetex Semiconductors plc 2006 I (A) D 5.3 2.8 Tape width Quantity per ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation 25°C amb Linear derating factor Power dissipation ...

Page 3

Typical characteristics Issue 1 - May 2006 © Zetex Semiconductors plc 2006 ZXMN6A08G 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance C (†) (‡) ...

Page 5

Typical characteristics Issue 1 - May 2006 © Zetex Semiconductors plc 2006 ZXMN6A08G 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - May 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 1 - May 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN6A08G www.zetex.com ...

Page 8

Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas ...

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