DSPIC30F3014-20I/PT Microchip Technology, DSPIC30F3014-20I/PT Datasheet - Page 180

• Manufacturer Part Number: DSPIC30F3014-20I/PT
• Description: IC, DSC, 16BIT, 24KB 40MHZ, 5.5V, TQFP44
• Manufacturer: Microchip Technology
• Series: DsPIC30Fr

Specifications of DSPIC30F3014-20I/PT

• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 30
• Flash Memory Size: 24KB
• Supply Voltage Range: 2.5V To 5.5V
• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 24KB (8K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 13x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TQFP, 44-VQFP
• Package: 44TQFP
• Device Core: dsPIC
• Family Name: dsPIC30
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 30
• Interface Type: I2C/SPI/UART
• On-chip Adc: 13-chx12-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT80PT3 - SOCKET TRAN ICE 80MQFP/TQFPAC30F006 - MODULE SKT FOR DSPIC30F 44TQFPAC164305 - MODULE SKT FOR PM3 44TQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F301420IPT

dsPIC30F3014/4013
TABLE 23-11: ELECTRICAL CHARACTERISTICS: BOR
TABLE 23-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
23.2
The information contained in this section defines dsPIC30F AC characteristics and timing parameters.
DS70138G-page 180
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
AC Characteristics and Timing Parameters
E
V
T
T
I
E
V
V
V
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
‘11’ values not in usable operating range.
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage on V
Transition
High-to-Low
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
Characteristic
(2)
DD
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
Min
10K
0.8
4.5
3.0
0.8
40
40
—
—
—
MIN
MIN
(3)
Typ
100K
100
100
1M
10
10
10
—
—
—
—
2
2
(1)
4.58
Min
2.6
4.1
—
—
Max
5.5
2.6
5.5
5.5
5.5
2.6
30
30
30
—
—
—
—
Typ
-40°C  T
-40°C  T
—
—
—
—
5
(1)
-40°C  T
-40°C  T
Units
Year
Year
E/W
E/W
mA
mA
mA
ms
ms
V
V
V
V
Max
2.71
4.73
A
A
4.4
—
—
 +85°C for Industrial
 +125°C for Extended
-40C  T
Using EECON to read/write
V
voltage
RTSP
Provided no other specifications
are violated
Row Erase
-40C  T
V
voltage
RTSP
Provided no other specifications
are violated
Row Erase
Bulk Erase
A
A
MIN
MIN
 2010 Microchip Technology Inc.
 +85°C for Industrial
 +125°C for Extended
Units
= Minimum operating
= Minimum operating
mV
V
V
V
V
A
A
Conditions
+85°C
+85°C
Not in operating
range
Conditions