M52D128168A-7.5BG ELITE SEMICONDUCTOR, M52D128168A-7.5BG Datasheet - Page 7

IC, SDRAM, 128MBIT, 133MHZ, FBGA-54

M52D128168A-7.5BG

Manufacturer Part Number
M52D128168A-7.5BG
Description
IC, SDRAM, 128MBIT, 133MHZ, FBGA-54
Manufacturer
ELITE SEMICONDUCTOR
Datasheet

Specifications of M52D128168A-7.5BG

Memory Type
DRAM - Sychronous
Memory Configuration
2M X 16
Ic Interface Type
Parallel
Memory Case Style
FBGA
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Frequency
133MHz
Filter Terminals
SMD
Rohs Compliant
Yes
Page Size
128MB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
CLK cycle time
CLK to valid
output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in
Hi-Z
ESMT
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Note: 1.Parameters depend on programmed CAS latency.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Elite Semiconductor Memory Technology Inc.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
Parameter
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
Symbol
t
t
t
t
t
t
t
t
t
SAC
SHZ
SLZ
CC
OH
CH
SS
SH
CL
Min
2.5
2.5
2.5
7
9
2
1
1
-7
1000
Max
6.5
6.5
*All AC parameters are measured from half to half.
8
8
Min
7.5
2.5
2.5
2.5
9
2
1
1
-7.5
1000
Max
7
8
7
8
Publication Date: Nov. 2007
Revision: 1.2
Min
2.5
1.5
10
12
3
3
2
1
M52D128168A
-10
1000
Max
10
10
9
9
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
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Note
1
1
2
3
3
3
3
2

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