S29AL032D70TFI000 Spansion Inc., S29AL032D70TFI000 Datasheet - Page 15

• Manufacturer Part Number: S29AL032D70TFI000
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of S29AL032D70TFI000

• Memory Size: 32Mbit
• Memory Configuration: 4M X 8
• Ic Interface Type: CFI, Parallel
• Access Time: 70ns
• Supply Voltage Range: 2.7 To 3.6 V
• Memory Case Style: TSOP
• No. Of Pins: 40

7.2
7.3
7.4
7.5
January 19, 2007 S29AL032D_00_A9
Requirements for Reading Array Data
Writing Commands/Command Sequences
Program and Erase Operation Status
Accelerated Program Operation
To read array data from the outputs, the system must drive the CE# and OE# pins to V
control and selects the device. OE# is the output control and gates array data to the output pins. WE# should
remain at V
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses
on the device-address inputs produce valid data on the device-data outputs. The device remains enabled for
read access until the command register contents are altered.
See
table for timing specifications and to
Characteristics table represents the active current specification for reading array data.
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to V
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or
words. Refer to
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four.
Byte Program Command Sequence on page 33
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 7.5 on page 17
address bits required to uniquely select a sector. The
erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to
I
Characteristics on page 49
During an erase or program operation, the system may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings and I
Operation Status on page 40
diagrams.
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC (ACC on Model 00) pin. This function is primarily intended to allow faster
manufacturing throughput at the factory.
If the system asserts V
Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce
the time required for program operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing V
operation. Note that the WP#/ACC pin must not be at V
programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may result.
Autoselect Command Sequence on page 32
CC2
in the DC Characteristics table represents the active current specification for the write mode.
Reading Array Data on page 32
IH
. The BYTE# pin determines whether the device outputs array data in words or bytes.
Word/Byte Configuration (Models 03, 04 Only) on page 12
indicate the address space that each sector occupies. A sector address consists of the
HH
D a t a
on this pin, the device automatically enters the previously mentioned Unlock
contains timing specification tables and timing diagrams for write operations.
for more information, and to
S h e e t
Figure 17.1 on page 49
for more information. Refer to the AC
S29AL032D
for more information.
has details on programming data to the device using both
HH
from the WP#/ACC pin returns the device to normal
Command Definitions on page 32
HH
AC Characteristics on page 49
for operations other than accelerated
CC
for the timing diagram. I
IL
read specifications apply. Refer to
, and OE# to V
Autoselect Mode on page 21
for more information.
Read Operations on page 49
IH
Table 7.3 on page 15
.
CC1
IL
. CE# is the power
contains details on
in the DC
for timing
Write
AC
Word/
and
and
13