SST25VF040B-50-4I-QAF SILICON STORAGE TECHNOLOGY, SST25VF040B-50-4I-QAF Datasheet - Page 12
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SST25VF040B-50-4I-QAF
Manufacturer Part Number
SST25VF040B-50-4I-QAF
Description
4M FLASH MEMORY, SPI EEPROM, WSON-8
Manufacturer
SILICON STORAGE TECHNOLOGY
Datasheet
1.SST25VF040B-50-4I-QAF.pdf
(28 pages)
Specifications of SST25VF040B-50-4I-QAF
Memory Size
4Mbit
Clock Frequency
50MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
WSON
No. Of Pins
8
Svhc
No SVHC (18-Jun-2010)
Device
RoHS Compliant
Package / Case
WSON
Memory Type
Flash
Memory Configuration
512K X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Data Sheet
Auto Address Increment (AAI) Word-Program
The AAI program instruction allows multiple bytes of data to
be programmed without re-issuing the next sequential
address location. This feature decreases total program-
ming time when multiple bytes or entire memory array is to
be programmed. An AAI Word program instruction pointing
to a protected memory area will be ignored. The selected
address range must be in the erased state (FFH) when ini-
tiating an AAI Word Program operation. While within AAI
Word Programming sequence, the only valid instructions
are AAI Word (ADH), RDSR (05H), or WRDI (04H). Users
have three options to determine the completion of each
AAI Word program cycle: hardware detection by reading
the Serial Output, software detection by polling the BUSY
bit in the software status register or wait T
Of-Write Detection section for details.
Prior to any write operation, the Write-Enable (WREN)
instruction must be executed. The AAI Word Program
instruction is initiated by executing an 8-bit command,
ADH, followed by address bits [A
addresses, two bytes of data is input sequentially, each one
from MSB (Bit 7) to LSB (Bit 0). The first byte of data (D0)
will be programmed into the initial address [A
A
into the initial address [A
driven high before the AAI Word Program instruction is exe-
cuted. The user must check the BUSY status before enter-
ing the next valid command. Once the device indicates it is
no longer busy, data for the next two sequential addresses
may be programmed and so on. When the last desired
byte had been entered, check the busy status using the
hardware method or the RDSR instruction and execute the
Write-Disable (WRDI) instruction, 04H, to terminate AAI.
User must check busy status after WRDI to determine if the
device is ready for any command. See Figures 9 and 10 for
AAI Word programming sequence.
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the
device will exit AAI operation and reset the Write-Enable-
Latch bit (WEL = 0) and the AAI bit (AAI=0).
End-of-Write Detection
There are three methods to determine completion of a pro-
gram cycle during AAI Word programming: hardware
detection by reading the Serial Output, software detection
by polling the BUSY bit in the Software Status Register or
wait T
described in the section below.
©2006 Silicon Storage Technology, Inc.
0
=0, the second byte of Data (D1) will be programmed
BP .
The hardware end-of-write detection method is
23
-A
1
] with A
23
-A
0
=1. CE# must be
0
BP .
]. Following the
Refer to End-
23
-A
1
] with
12
Hardware End-of-Write Detection
The hardware end-of-write detection method eliminates the
overhead of polling the Busy bit in the Software Status
Register during an AAI Word program operation. The 8-bit
command, 70H, configures the Serial Output (SO) pin to
indicate Flash Busy status during AAI Word programming.
(see Figure 7) The 8-bit command, 70H, must be executed
prior to executing an AAI Word-Program instruction. Once
an internal programming operation begins, asserting CE#
will immediately drive the status of the internal flash status
on the SO pin. A “0” indicates the device is busy and a “1”
indicates the device is ready for the next instruction. De-
asserting CE# will return the SO pin to tri-state.
The 8-bit command, 80H, disables the Serial Output (SO)
pin to output busy status during AAI-Word-program opera-
tion and return SO pin to output Software Status Register
data during AAI Word programming. (see Figure 8)
FIGURE 7: E
FIGURE 8: D
SCK
SCK
CE#
CE#
SO
SO
SI
SI
MODE 3
MODE 0
MODE 3
MODE 0
DURING
DURING
NABLE
ISABLE
HIGH IMPEDANCE
HIGH IMPEDANCE
4 Mbit SPI Serial Flash
MSB
MSB
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7
AAI P
AAI P
SO
SO
AS
AS
ROGRAMMING
ROGRAMMING
70
80
H
H
1295 DisableSO.0
ARDWARE
ARDWARE
1295 EnableSO.0
SST25VF040B
S71295-01-000
RY/BY#
RY/BY#
1/06