AM29F400BT-70EF Spansion Inc., AM29F400BT-70EF Datasheet - Page 38

IC, FLASH, 4MBIT, 70NS, TSOP-48

AM29F400BT-70EF

Manufacturer Part Number
AM29F400BT-70EF
Description
IC, FLASH, 4MBIT, 70NS, TSOP-48
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29F400BT-70EF

Memory Type
Flash
Memory Size
4Mbit
Memory Configuration
512K X 8 / 256K X 16
Access Time
70ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
TSOP
No. Of Pins
48
Cell Type
NOR
Density
4Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19/18Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
50mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F400BT-70EF
Manufacturer:
SPANSION
Quantity:
350
Part Number:
AM29F400BT-70EF
Manufacturer:
AMD
Quantity:
2 300
Part Number:
AM29F400BT-70EF
Manufacturer:
SPANSION
Quantity:
20 000
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
36
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
. Test conditions: V
Description
Word Mode
Byte Mode
Control Pin Capacitance
Parameter Description
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
CC
Typ (Note 1)
= 4.5 V, 1,000,000 cycles.
CC
1.0
3.6
3.1
D A T A
11
12
7
= 5.0 V, one pin at a time.
Am29F400B
Max (Note 2)
S H E E T
10.8
300
500
9.3
8
Test Conditions
°
150° C
125° C
C, 5.0 V V
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
Unit
µs
µs
s
s
s
s
, 1,000,000 cycles. Additionally,
Excludes 00h programming
prior to erasure
Excludes system level
overhead (Note 5)
Min
10
20
21505E8 November 11, 2009
Typ
8.5
7.5
6
Comments
V
CC
+100 mA
12.5 V
Max
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF

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