IS62C256AL-45ULI INTEGRATED SILICON SOLUTION (ISSI), IS62C256AL-45ULI Datasheet - Page 7
IS62C256AL-45ULI
Manufacturer Part Number
IS62C256AL-45ULI
Description
IC, SRAM, 256KBIT, 45NS, SOP-28
Manufacturer
INTEGRATED SILICON SOLUTION (ISSI)
Datasheet
1.IS62C256AL-45ULI.pdf
(12 pages)
Specifications of IS62C256AL-45ULI
Memory Size
256Kbit
Memory Configuration
32K X 8
Access Time
45ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOP
No. Of Pins
28
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
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IS65C256AL
IS62C256AL
AC WAVEFORMS
WRITE CYCLE NO. 1
Integrated Silicon Solution, Inc.
Rev. C
07/12/07
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
4. Tested with OE HIGH.
Symbol
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
WC
SCS
AW
HA
SA
PWE
PWE
SD
HD
1,
2
ADDRESS
(4)
D
OUT
WE
D
CE
IN
Parameter
Write Cycle Time
CE to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
(CE Controlled, OE is HIGH or LOW)
DATA UNDEFINED
t
SA
t
HZWE
t
VALID ADDRESS
AW
t
t
PWE1
PWE2
t
t
SCS
WC
Min.
(1,3)
25
15
15
15
12
0
0
0
HIGH-Z
(1 )
-25 ns
(Over Operating Range)
t
Max.
SD
DATA
—
—
—
—
—
—
—
—
IN
VALID
t
Min. Max.
HD
t
45
35
25
25
20
0
0
0
-45 ns
LZWE
t
HA
—
—
—
—
—
—
—
—
CS_WR1.eps
Unit
ns
ns
ns
ns
ns
ns
ns
ns
7