AS6C8016-55BIN ALLIANCE MEMORY, AS6C8016-55BIN Datasheet - Page 8

• Manufacturer Part Number: AS6C8016-55BIN
• Description: SRAM, 8MB, 2.7-5.5V, 512KX16, TFBGA48
• Manufacturer: ALLIANCE MEMORY

Specifications of AS6C8016-55BIN

• Memory Size: 8Mbit
• Access Time: 55ns
• Supply Voltage Range: 2.7V To 5.5V
• Memory Case Style: TFBGA
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Operating Temperature Max: 85°C
• Memory Configuration: 512K X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DATA RETENTION CHARACTERISTICS
V
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
t
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1)
Low Vcc Data Retention Waveform (2)
RC
LB#,UB#
CC
CE#
*
Vcc
Vcc
= Read Cycle Time
NOVEMBER/2007, V 1.0
January 2007
NOVEMBER 2007
for Data Retention
PARAMETER
Vcc(min.)
Vcc(min.)
SYMBOL
V
V
t
IH
t
IH
t
V
CDR
CDR
I
CDR
512K X 16 BIT SUPER LOW POWER CMOS SRAM
t
DR
DR
R
CE# V
V
CE#
Other pins at 0.2V or V
See Data Retention
Waveforms (below)
CC
= 2.0V
> _
> _
(CE# controlled)
(LB#, UB# controlled)
Alliance Memory Inc.
LB#,UB#
V
CC
CE#
CC
TEST CONDITION
V
V
- 0.2V
-0.2V
DR
DR
> _
> _
> _
Vcc-0.2V
> _
512K X 8 BIT LOW POWER CMOS SRAM
2.0V
2.0V
Vcc-0.2V
CC
-0.2V
-I
Vcc(min.)
Vcc(min.)
t
t
R
R
V
V
MIN.
IH
IH
t
2.0
RC
0
-
*
TYP.
5
-
-
-
Page 8 of 12
MAX.
AS6C8016
5.5
50
-
-
UNIT
µ A
ns
ns
V