AS6C8016-55ZIN ALLIANCE MEMORY, AS6C8016-55ZIN Datasheet - Page 3

SRAM, 8MB, 2.7-5.5V, 512KX16, TSOP44

AS6C8016-55ZIN

Manufacturer Part Number
AS6C8016-55ZIN
Description
SRAM, 8MB, 2.7-5.5V, 512KX16, TSOP44
Manufacturer
ALLIANCE MEMORY
Datasheet

Specifications of AS6C8016-55ZIN

Memory Size
8Mbit
Access Time
55ns
Supply Voltage Range
2.7V To 5.5V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Memory Configuration
512K X 16
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AS6C8016-55ZIN
Quantity:
4 112
Company:
Part Number:
AS6C8016-55ZIN
Quantity:
4 112
Part Number:
AS6C8016-55ZINTR
Manufacturer:
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Quantity:
15 760
TRUTH TABLE
Standby
Output Disable
Read
Write
Note: H = V
DC ELECTRICAL CHARACTERISTICS
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
Standby Power
Supply Current
Notes:
1. V
2. V
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
CAPACITANCE
Input Capacitance
Input/Output Capacitance
Note : These parameters are guaranteed by device characterization, but not production tested.
Typical valued are measured at V
IH
IL
NOVEMBER/2007, V 1.0
(min) = V
January 2007
NOVEMBER 2007
PARAMETER
(max) = V
MODE
IH
SS
, L = V
CC
- 3.0V for pulse width less than 10ns.
PARAMETER
+ 3.0V for pulse width less than 10ns.
IL
, X = Don't care.
(T
CE#
A
H
X
L
L
L
L
L
L
L
L
SYMBOL
= 25 , f = 1.0MHz)
V
V
V
V
V
I
I
I
I
CC1
SB1
I
LO
CC
IH
IL
CC
OH
512K X 16 BIT SUPER LOW POWER CMOS SRAM
LI
OL
CC
OE#
*2
*1
H
H
X
X
X
X
X
= V
L
L
L
CC
V
V
Output Disabled
I
I
Cycle time = Min.
CE# = V
I
Other pins at V
Cycle time = 1 µ s
CE#
Other pins at 0.2V or V
CE#
Other pins at 0.2V or V
OH
OL
I/O
CC
CC
(TYP.) and T
WE# LB#
= 2mA
= 0mA
X
X
H
H
H
H
H
= -1mA
L
L
L
TEST CONDITION
0.2V, I
SYMBOL
V
V
V
Alliance Memory Inc.
IL
IN
OUT
CC
,
C
X
H
X
H
H
L
L
L
L
L
C
-0.2V
A
I/O
IN
I/O
= 25 ℃
V
IL
SS
= 0mA
V
UB#
or V
SS
H
H
H
X
X
L
L
L
L
L
512K X 8 BIT LOW POWER CMOS SRAM
IH
CC
CC
DQ0-DQ7
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
-0.2V
-0.2V
D
D
D
D
MIN.
I/O OPERATION
OUT
OUT
IN
IN
-
-
- 55
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
MIN.
- 0.2
2.7
2.4
2.4
- 1
- 1
D
D
-
-
-
-
D
D
OUT
OUT
IN
IN
MAX
6
8
TYP.
3.0
2.7
30
6
-
-
-
-
-
-
SUPPLY CURRENT
*4
Page 3 of 12
V
MAX.
CC
AS6C8016
I
I
I
5.5
0.6
0.4
80
60
CC
CC
CC
1
1
4
+0.3
-
I
SB1
,I
,I
,I
CC1
CC1
CC1
UNIT
pF
pF
UNIT
mA
mA
µ A
µ A
µ A
V
V
V
V
V

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