IS61LPS12836A-200TQLI INTEGRATED SILICON SOLUTION (ISSI), IS61LPS12836A-200TQLI Datasheet - Page 11

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IS61LPS12836A-200TQLI

Manufacturer Part Number
IS61LPS12836A-200TQLI
Description
IC, SRAM, 4MBIT, 3.1NS, TQFP-100
Manufacturer
INTEGRATED SILICON SOLUTION (ISSI)
Datasheet

Specifications of IS61LPS12836A-200TQLI

Memory Size
1Mbit
Memory Configuration
128 X 36
Clock Frequency
200MHz
Access Time
3.1ns
Supply Voltage Range
3.135V To 3.465V
Memory Case Style
TQFP
No. Of Pins
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LPS12836A-200TQLI
Manufacturer:
ISSI
Quantity:
326
Part Number:
IS61LPS12836A-200TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61LPS12836A-200TQLI
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS61LPS12836A-200TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
LINEAR BURST ADDRESS TABLE (MODE = VSS)
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
2. This device contains circuity to protect the inputs against damage due to high static voltages or
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc.
Rev. H
01/07/2010
INTERLEAVED BURST ADDRESS TABLE (MODE = V
External Address
Symbol
T
P
I
V
V
V
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
electric fields; however, precautions may be taken to avoid application of any voltage higher than
maximum rated voltages to this high-impedance circuit.
OUT
STG
IN
IN
D
DD
, V
A1 A0
A1', A0' = 1,1
OUT
00
01
10
11
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to Vss for I/O Pins
Voltage Relative to Vss for
for Address and Control Inputs
Voltage on V
1st Burst Address
DD
Supply Relative to Vss
A1 A0
01
00
11
10
0,0
1,0
(1)
2nd Burst Address
–0.5 to V
0,1
A1 A0
–0.5 to V
10
11
00
01
–55 to +150
–0.5 to 4.6
Value
100
1.6
DDQ
DD
DD
+ 0.5
+ 0.5
or No Connect)
3rd Burst Address
Unit
mA
°C
W
V
V
V
A1 A0
11
10
01
00
11

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