DG428DN-E3 Vishay, DG428DN-E3 Datasheet - Page 3

• Manufacturer Part Number: DG428DN-E3
• Description: IC,ANALOG MUX,SINGLE,8-CHANNEL,CMOS,LDCC,20PIN,PLASTIC
• Manufacturer: Vishay
• Type: Analog Multiplexerr

Specifications of DG428DN-E3

• Rohs Compliant: YES
• Number Of Channels: 8 Channel
• On Resistance (max): 150 Ohms
• Propagation Delay Time: 250 ns
• On Time (max): 300 ns
• Off Time (max): 300 ns
• Supply Voltage (max): 25 V
• Supply Current: 0.02 mA
• Maximum Power Dissipation: 800 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PLCC-20
• Mounting Style: SMD/SMT
• Number Of Switches: Single
• Package: 20PLCC
• Maximum On Resistance: 150@12V Ohm
• Maximum Propagation Delay Bus To Bus: 250@±15V|280@12V ns
• Maximum High Level Output Current: 30 mA
• Multiplexer Architecture: 8:1
• Maximum Turn-on Time: 300@12V ns
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Voltage Referenced to V–
V+
GND
Digital Inputs
Current (Any Terminal)
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max)
Storage Temperature
Document Number: 70063
S-52433—Rev. J, 06-Sep-99
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Greatest Change in r
Between Channels
Source Off
Leakage Current
Drain Off
L
Leakage Current
Drain On
L
Leakage Current
Digital Control
Logic Input Current
I
Input Voltage High
Logic Input Current
Input Voltage Low
Logic Input Capacitance
Dynamic Characteristics
Transition Time
Break-Before-Make Interval
Enable and Write
Turn-On Time
Enable and Reset
Turn-Off Time
Charge Injection
Off Isolation
Source Off Capacitance
Drain Off Capacitance
Drain Off Capacitance
Drain On Capacitance
Drain On Capacitance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
g
k
k
t V lt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
p
C
C
a
, V
Hi h
S
t
t
, V
g
D
DS(on)
e
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(AK Suffix)
(DJ, DN Suffix)
t
Symbol
t
OFF(EN,RS)
ON(EN,WR)
V
t
r
ANALOG
C
C
C
C
C
TRANS
t
OIRR
DS(on)
I
I
I
I
I
r
OPEN
S(off)
D(off)
D(off)
D(on)
D(on)
DS(on)
I
I
C
I
S(off)
D(off)
D(off)
D(on)
D(on)
AH
AH
. . . . . . . . . . . . . . . . . . . . . . . .
AL
Q
in
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
30 mA, whichever occurs first
(V–) –2 V to (V+) +2 V or
Unless Otherwise Specified
V
V+ = 15 V, V– = –15 V, WR = 0,
V
V
EN
V
RS = 2.4 V, V
V
D
D
S
S
V
V
= 0 V, R
V
V
= 0 V, V
V
I
V
V
V
V
= 0 V, V
V
C
V
V
EN
S
= V
S
S
Test Conditions
D
V
GEN
f
f = 1 MHz
D
S
S
0 V V
EN
EN
AL
AH
See Figures 6 and 7
See Figures 6 and 8
L
RS = 0 V, WR = 0 V
= –1 mA, V
=
EN
–65 to 150 C
–10 V < V
= 7 V
–65 to 125 C
=
=
=
=
= 1 nF, See Figure 9
= 0 V, 2.4 V, V
D
1 MH
= 0.8 V
= 2.4 V
= 2.4 V
,
See Figure 5
See Figure 4
= 0 V
= 0 V, R
=
I
0 8 V
10 V, V
V
V
S
V
f = 1 MHz
10 V, V
L
10 V
10 V
10 V
EN
EN
RMS,
EN
A
EN
A
100 mA
= –1 mA
= 300
30 mA
= 2.4 V
10 V
= 15 V
IN
= 0 V
= 0 V, f = 1 MHz
44 V
25 V
= 0 V
0 V
S
= 2.4 V, 0.8 V
f = 100 kHz
AH
D
GEN
AL
< 10 V
=
= 2.4 V
= 0.8 V
A
C
= 0
= 0 V
L
10 V
= 15 pF
DG428
DG429
DG428
DG429
DG428
DG429
DG428
DG429
Power Dissipation (Package)
18-Pin Plastic DIP
18-Pin CerDIP
20-Pin PLCC
28-Pin Widebody SOIC
Notes:
a.
b.
c.
d.
e.
f.
f
Signals on S
diodes. Limit forward diode current to maximum current ratings.
All leads soldered or welded to PC board.
Derate 6.3 mW/ C above 75 C.
Derate 12 mW/ C above 75 C.
Derate 10 mW/ C above 75 C.
Derate 6 mW/ C above 75 C.
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
f
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
X
b
c
, D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
X
Typ
f
or IN
–0.01
0.01
0.01
150
–75
55
30
90
55
40
20
54
34
0.03
0.07
0.05
0.07
0.05
11
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
8
1
c
X
b
exceeding V+ or V– will be clamped by internal
Min
–100
–100
–0.5
–15
–50
–50
–50
–55 to 125 C
–1
–1
–1
–1
–1
10
www.vishay.com FaxBack 408-970-5600
A Suffix
d
Vishay Siliconix
Max
100
125
100
100
250
300
150
225
150
300
0.5
15
50
50
50
1
1
1
1
1
1
d
DG428/429
Min
–100
–100
–0.5
–15
–50
–50
–50
–1
–1
–1
–1
–1
10
–40 to 85 C
D Suffix
d
Max
100
125
100
100
250
300
150
225
150
300
0.5
15
50
50
50
1
1
1
1
1
1
470 mW
900 mW
800 mW
450 mW
d
5-3
Unit
pC
nA
pF
dB
pF
ns
%
V
A
A
A
A
A
F
F