DS90LV027ATM National Semiconductor, DS90LV027ATM Datasheet - Page 2
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DS90LV027ATM
Manufacturer Part Number
DS90LV027ATM
Description
Driver IC
Manufacturer
National Semiconductor
Specifications of DS90LV027ATM
Driver Case Style
NSOIC
No. Of Pins
8
No. Of Driver/receivers
2/0
Peak Reflow Compatible (260 C)
No
Supply Voltage
3.3V
Supply Voltage Max
3.3V
Leaded Process Compatible
No
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DS90LV027ATM
Manufacturer:
nstion
Quantity:
427
Part Number:
DS90LV027ATM
Manufacturer:
NS/国半
Quantity:
20 000
Part Number:
DS90LV027ATMX
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
DS90LV027ATMX/NOPB
Manufacturer:
NS
Quantity:
8 913
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DIFFERENTIAL DRIVER CHARACTERISTICS
V
∆V
V
V
V
∆V
I
I
V
V
I
I
V
I
DIFFERENTIAL DRIVER CHARACTERISTICS
t
t
t
t
t
t
t
t
f
OXD
OSD
IH
IL
CC
Symbol
PHLD
PLHD
SKD1
SKD2
SKD3
SKD4
TLH
THL
MAX
Symbol
OD
OH
OL
OS
IH
IL
CL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 7)
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 4, 5, 6)
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
Note 3: All typicals are given for: V
Note 4: These parameters are guaranteed by design. The limits are based on statistical analysis of the device over PVT (process, voltage, temperature) ranges.
Note 5: C
Supply Voltage (V
Input Voltage (DI)
Output Voltage (DO
Maximum Package Power Dissipation
Storage Temperature Range
Lead Temperature Range Soldering
OD
OS
M Package
Derate M Package
(4 sec.)
L
includes probe and fixture capacitance.
Output Differential Voltage
V
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input Clamp Voltage
Power Supply Current
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Pulse Skew |t
Channel to Channel Skew (Note 9)
Differential Part to Part Skew (Note 10)
Differential Part to Part Skew (Note 11)
Transition Low to High Time
Transition High to Low Time
Maximum Operating Frequency (Note 12)
OD
Magnitude Change
CC
±
Parameter
)
)
CC
Parameter
= +3.3V and T
9.5 mW/˚C above +25˚C
PHLD
@
− t
−65˚C to +150˚C
+25˚C
A
−0.3V to +3.6V
−0.3V to +3.9V
PLHD
= +25˚C.
−0.3V to +4V
R
(Figure 1)
V
V
V
I
No Load
R
CL
OUT
IN
IN
L
L
(Note 1)
| (Note 8)
= 100Ω
= 100Ω
= −18 mA
1190 mW
= 3.3V or 2.4V
= GND or 0.5V
+260˚C
= V
CC
Conditions
or GND, V
V
2
IN
R
(Figure 2 and Figure 3)
L
= V
= 100Ω, C
Recommended Operating
Conditions
Supply Voltage (V
Temperature (T
ESD Ratings
CC
CC
(HBM 1.5 kΩ, 100 pF)
(EIAJ 0 Ω, 200 pF)
(CDM)
(IEC direct 330 Ω, 150 pF)
Conditions
= 0V
or GND
L
= 15 pF
A
)
DO+,
DO−
CC
V
Pin
DI
CC
)
Min
0.3
0.3
0.2
0.2
1.125
GND
0
0
0
0
−1.5
Min
250
Min
−40
0.9
2.0
3.0
0
Typ
Typ
350
0.8
1.1
0.3
0.4
0.5
0.5
3.3
25
−5.7
−0.6
Typ
360
1.4
1.1
1.2
±
±
±
14
1
3
8
1
2
1
Max
+85
3.6
Max
1.375
1.5
1.5
0.7
0.8
1.0
1.2
1.0
1.0
Max
450
±
V
±
±
1.6
0.8
35
25
−8
14
20
CC
10
10
10
≥ 1000V
≥ 1000V
Units
≥ 8kV
≥ 4kV
OD
˚C
V
Units
Units
MHz
.
mV
mV
mV
mA
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
µA
µA
µA
V
V
V
V
V
V