LF444ACN National Semiconductor, LF444ACN Datasheet - Page 3

• Manufacturer Part Number: LF444ACN
• Description: Operational Amplifier (Op-Amp) IC
• Manufacturer: National Semiconductor

Specifications of LF444ACN

• No. Of Amplifiers: 4
• Slew Rate: 1V/µs
• No. Of Pins: 14
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• Mounting Type: Through Hole
• Package / Case: 14-DIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SR
GBW
e
i
Symbol
n
n
AC Electrical Characteristics
Note 1: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 2: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θ
Note 4: The LF444A is available in both the commercial temperature range 0˚C ≤ T
is available in the commercial temperature range only. The temperature range is designated by the position just before the package type in the device number. A
“C” indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “D” package only.
Note 5: Unless otherwise specified the specifications apply over the full temperature range and for V
V
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
Note 8: Refer to RETS444X for LF444MD military specifications.
Note 9: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside
guaranteed limits.
Note 10: Human body model, 1.5 kΩ in series with 100 pF.
Note 11: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Typical Performance Characteristics
±
OS
15V to
, I
B
, and I
±
Amplifier-to-Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
5V for the LF444 and from
OS
are measured at V
Parameter
Input Bias Current
CM
±
= 0.
20V to
±
5V for the LF444A.
V
V
T
f = 1 kHz
T
D
A
A
. T
S
S
00915612
=
=
= 25˚C, R
= 25˚C, f = 1 kHz
j
= T
(Note 5)
±
±
Conditions
15V, T
15V, T
A
+ θ
jA
P
S
A
A
D
= 100Ω,
= 25˚C
= 25˚C
where θ
3
A
jA
≤ 70˚C and the military temperature range −55˚C ≤ T
is the thermal resistance from junction to ambient. Use of a heat sink is
Min
LF444A
−120
0.01
Typ
35
S
1
1
=
±
20V for the LF444A and for V
Max
Input Bias Current
jA
.
Min
LF444
−120
0.01
Typ
35
1
1
Max
S
=
A
±
≤ 125˚C. The LF444
00915613
15V for the LF444.
j
. Due to limited
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Units
V/µs
MHz
dB