LM4880M National Semiconductor, LM4880M Datasheet - Page 13

• Manufacturer Part Number: LM4880M
• Description: Audio Power Amplifier IC
• Manufacturer: National Semiconductor

Specifications of LM4880M

• No. Of Channels: 2
• Output Power: 250mW
• Load Impedance: 8ohm
• Operating Temperature Range: -40°C To +85°C
• No. Of Pins: 8
• Termination Type: SMD
• Output Power Pout: 250mW
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Application Information
LM4880 MDA MWA
DUAL 250 MW AUDIO POWER AMPLIFIER WITH SHUTDOWN MODE
SIGNAL NAME
BYPASS
GND
NC
GND
SHUTDOWN
INPUT B
OUTPUT B
VDD
GND
OUTPUT A
INPUT A
NC
NC
Physical Die Identification
Die Step
Wafer Diameter
Dise Size (Drawn)
Thickness
Min Pitch
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
PAD# NUMBER
Fabrication Attributes
Physical Attributes
10
11
12
13
1
2
3
4
5
6
7
8
9
(Referenced to die center, coordinates in µm) NC = No Connection
Die Bond Pad Coordinate Locations (B - Step)
(Continued)
-322
-359
-359
-359
-323
-109
-109
358
358
359
323
X/Y COORDINATES
X
8
8
LM4880B
B
150mm
952µm x 1283µm
37mils x 51mils
254µm Nominal
117µm Nominal
Die/Wafer Characteristics
Die Layout (B - Step)
13
-259
-523
-523
-523
523
259
141
406
523
523
523
-78
Y
5
Bond Pad Opening Size (min)
Bond Pad Metalization
Passivation
Back Side Metal
Back Side Connection
01234337
86
86
86
86
86
86
86
86
86
86
86
86
86
X
General Die Information
PAD SIZE
x
x
x
x
x
x
x
x
x
x
x
x
x
86µm x 86µm
ALUMINUM
NITRIDE
Bare Back
GND
www.national.com
188
188
188
188
86
86
86
86
86
86
86
86
86
Y