MCP6G01T-E/MS Microchip Technology, MCP6G01T-E/MS Datasheet - Page 14

• Manufacturer Part Number: MCP6G01T-E/MS
• Description: IC,Voltage Controlled Gain Amplifier,SINGLE,TSSOP,8PIN,PLASTIC
• Manufacturer: Microchip Technology

Specifications of MCP6G01T-E/MS

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 4.5 V/µs
• -3db Bandwidth: 900kHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 110µA
• Current - Output / Channel: 20mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MCP6G01/1R/1U/2/3/4
Note: Unless otherwise indicated, T
R
FIGURE 2-31:
FIGURE 2-32:
Response.
FIGURE 2-33:
Frequency, V
DS22004B-page 14
L
= 100 kΩ to V
-10
-20
-30
-40
0.001
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
40
30
20
10
1.E+04
0.01
0
0.00
0.1
10
10k
1.E+02
1
100
5.00
G = +50
G = +10
G = +1
10.00
OUT
G = +50
G = +10
G = +1
DD
15.00
/2, C
= 2.8 V
1.E+05
100k
V
G = +50
G = +10
G = +1
1.E+03
Time (5 µs/div)
OUT
20.00
Gain vs. Frequency.
Small Signal Pulse
1k
THD plus Noise vs.
Frequency (Hz)
Frequency (Hz)
L
Measurement BW = 80 kHz
= 60 pF, GSEL = V
25.00
P-P
30.00
.
GV
1.E+04
1.E+06
35.00
10k
1M
IN
V
V
V
DD
OUT
DD
40.00
= 5.0V
A
= +5.0V
= 2.8V
= +25°C, V
45.00
DD
1.E+05
P-P
50.00
100k
1.E+07
10M
/2, and CS is tied low.
1
1
1
1
1
0
0
0
DD
= +1.8V to +5.5V, V
FIGURE 2-34:
Load.
FIGURE 2-35:
Response.
FIGURE 2-36:
Frequency, V
0.001
7
6
5
4
3
2
1
0
0.01
10
0.1
10
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E+02
1
100
0.00
G = +50
G = +10
G = +1
SS
OUT
5.00
= GND, G = +1 V/V, V
10.00
= 4.0 V
Capacitive Load (pF)
1.E+03
Gain Peaking vs. Capacitive
15.00
Large Signal Pulse
THD plus Noise vs.
1k
V
G = +1
G = +10
G = +50
Frequency (Hz)
© 2006 Microchip Technology Inc.
OUT
Time (5 µs/div)
Measurement BW = 80 kHz
GV
20.00
100
P-P
G = +10
G = +50
I
G = +1
25.00
.
1.E+04
30.00
10k
V
V
35.00
OUT
DD
V
= 5.0V
DD
IN
= 4 V
40.00
= +5.0V
= (0.3V)/G,
1.E+05
45.00
P-P
100k
1000
50.00