MCP73833-NVI/UN Microchip Technology, MCP73833-NVI/UN Datasheet - Page 4
![1A Li-Ion/Li-Poly Charge Mgmt Controller, PG Output 10 MSOP 3x3mm TUBE](/photos/6/59/65940/c04-021-msop_sml.jpg)
MCP73833-NVI/UN
Manufacturer Part Number
MCP73833-NVI/UN
Description
1A Li-Ion/Li-Poly Charge Mgmt Controller, PG Output 10 MSOP 3x3mm TUBE
Manufacturer
Microchip Technology
Specifications of MCP73833-NVI/UN
Function
Charge Management
Battery Type
Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
Voltage - Supply
3.75 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
10-TFSOP (0.118", 3.00mm Width)
Output Voltage
4.2 V, 4.35 V, 4.4 V, 4.5 V
Output Current
1200 mA
Operating Supply Voltage
3.75 V to 6 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MCP73833EV - BOARD EVAL FOR MCP73833
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
MCP73833/4
DC CHARACTERISTICS (CONTINUED)
DS22005A-page 4
Electrical Specifications: Unless otherwise specified, all limits apply for V
Typical values are at +25°C, V
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
Precondition Voltage Threshold
Precondition Hysteresis
Charge Termination
Charge Termination Current Ratio
Automatic Recharge
Recharge Voltage Threshold Ratio
Pass Transistor ON-Resistance
ON-Resistance
Battery Discharge Current
Output Reverse Leakage Current
Status Indicators - STAT1, STAT2, PG
Sink Current
Low Output Voltage
Input Leakage Current
PROG Input
Charge Impedance Range
Standy Impedance
Thermistor Bias
Thermistor Current Source
Thermistor Comparator
Upper Trip Threshold
Upper Trip Point Hysteresis
Lower Trip Threshold
Lower Trip Point Hysteresis
System Test (LDO) Mode
Input High Voltage Level
THERM Input Sink Current
Bypass Capacitance
Ratio
Parameters
DD
= [V
REG
V
V
I
I
I
TERM
PREG
DISCHARGE
(Typ)+1.0V]
PTH
RTH
V
V
R
R
R
I
V
THERM
Sym
I
I
C
T1HYS
T2HYS
V
PHYS
DSON
SINK
PROG
PROG
V
V
SINK
V
I
BAT
LK
/ V
/ V
OL
T1
T2
IH
/ I
/ I
REG
REG
REG
REG
(V
0.235
3.75
1.20
DD
Min
7.5
5.6
7.5
4.7
15
30
—
64
69
—
15
—
—
—
—
—
—
—
—
—
—
70
47
—
—
1
3
1
-0.1)
66.5
71.5
94.0
96.5
0.15
0.25
0.15
0.01
1.23
0.25
Typ
100
100
300
-5.5
7.5
0.4
-50
10
20
40
10
20
15
50
50
—
—
—
—
—
5
6
DD
= [V
0.265
Max
12.5
6.25
12.5
1.26
200
9.4
-15
25
50
70
75
25
25
20
53
20
—
—
—
—
—
—
—
—
—
—
REG
2
2
2
1
1
(Typ)+0.3V] to 6V, T
Units
mΩ
mV
mA
mV
mV
µA
µA
µA
µA
µA
kΩ
kΩ
µA
µA
µF
µF
%
%
%
%
%
%
%
%
%
%
%
%
V
V
V
V
© 2006 Microchip Technology Inc.
PROG = 1.0 kΩ to 10 kΩ
T
V
V
PROG = 1.0 kΩ to 10 kΩ
T
V
V
T
PROG Floating
V
V
Charge Complete
I
High Impedance, 6V on pin
Minimum Impedance for
Standby
2 kΩ < R
V
V
Stand-by or system test mode
I
I
SINK
OUT
OUT
A
A
J
BAT
BAT
BAT
DD
DD
DD
THERM
THERM
=-5°C to +55°C
=-5°C to +55°C
= 105°C
= 3.75V
< V
< V
A
< 250 mA
> 250 mA
Low to High
High to Low
High to Low
= 4 mA
=-40°C to 85°C.
BAT
STOP
Low to High
High to Low
THERM
Conditions
< 50 kΩ