PIC16F616-E/ML Microchip Technology, PIC16F616-E/ML Datasheet - Page 7

1.75KB Flash, 64B RAM, 6 I/O, 8MHz Internal Oscillator 16 QFN 4x4mm TUBE

PIC16F616-E/ML

Manufacturer Part Number
PIC16F616-E/ML
Description
1.75KB Flash, 64B RAM, 6 I/O, 8MHz Internal Oscillator 16 QFN 4x4mm TUBE
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F616-E/ML

Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
11
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MCP1631RD-DCPC1 - REF DES BATT CHARG OR LED DRIVERAC162083 - HEADER MPLAB ICD2 PIC16F616 8/14AC164324 - MODULE SKT FOR MPLAB 8DFN/16QFNXLT16QFN1 - SOCKET TRANSITION 14DIP TO 16QFN
Eeprom Size
-
Connectivity
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
4.1.1
The
PIC16F610 program memories can be written one
word at a time to allow compatibility with other 8-pin
and 14-pin Flash PIC
(>0x2000) must be written one word (or byte) at a time.
The sequences for programming one word of program
memory at a time is:
1.
2.
3.
4.
5.
6.
See Figure 4-12 for more information.
 2009 Microchip Technology Inc.
Load a word at the current program memory
address using the Load Data For Program
Memory command.
Issue a Begin Programming (externally timed)
command.
Wait T
Issue End Programming command.
Issue an Increment Address command.
Repeat this sequence as required to write
program, calibration or configuration memory.
PIC12F609/12F615/12F617/16F610/16F616 AND PIC12HV609/12HV615/16HV610/16HV616
PIC12F615,
PROG
ONE-WORD PROGRAMMING
1.
®
PIC12F609,
devices. Configuration memory
PIC16F616
and
4.1.2
The PIC16F616/PIC12F617 program memory can be
written four words at a time using the four-word algo-
rithm. Configuration memory (addresses >0x2000) and
non-aligned (addresses modulo 4 not equal to zero)
starting
programming algorithm.
This algorithm writes four sequential addresses in
program memory. The four addresses must point to a
four-word block which address modulo 4 of 0, 1, 2 and
3. For example, programming address 4 through 7 can
be programmed together. Programming addresses 2
through 5 will create an unexpected result.
The sequence for programming four words of program
memory at a time is:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. Issue End Programming.
11. Wait T
12. Issue an Increment Address command to point
13. Repeat steps 1 through 12 as required to write
See Figure 4-12 for more information.
Note:
Load a word at the current program memory
address using the Load Data For Program Mem-
ory command. This location must be address
modulo 4 equal to 0.
Issue an Increment Address command to point
to the next address in the block.
Load a word at the current program memory
address using the Load Data For Program
Memory command.
Issue an Increment Address command to point
to the next address in the block.
Load a word at the current program memory
address using the Load Data For Programming
Memory command.
Issue and Increment Address command to point
to the next address in the book.
Load a word at the current program memory
address using the Load Data For Programming
Memory command.
Issue
externally timed.
Wait T
to the start of the next block of addresses.
the desired range of program memory.
addresses
PROG
DIS
FOUR-WORD PROGRAMMING
Only the PIC16F616 and PIC12F617 pro-
gram memory can be written to using the
four-word programming algorithm.
a
.
1.
Begin
must
Programming
use
DS41396A-page 7
the
command
one-word

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