PIC18LF2610-I/SO Microchip Technology, PIC18LF2610-I/SO Datasheet - Page 326

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PIC18LF2610-I/SO

Manufacturer Part Number
PIC18LF2610-I/SO
Description
IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,SOP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18LF2610-I/SO

Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3968 B
Interface Type
CCP, ECCP, EUSART, I2C, MSSP, SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
25
Number Of Timers
1 x 8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
Data Rom Size
3968 B
Height
2.31 mm
Length
17.87 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2 V
Width
7.49 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
PIC18F2X1X/4X1X
TABLE 25-1:
DS39636D-page 328
DC Characteristics
D110
D113
D130
D131
D132
D132A V
D133
D133A T
D134
Note 1:
Param
No.
2:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
V
T
T
DDP
Sym
IE
IW
RETD
IE
IW
PP
P
PR
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Required only if Single-Supply programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
or Write
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read
for Block Erase
for Externally Timed Erase
Characteristic
PP
/RE3 pin
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
DD
V
Min
10K
4.5
4.5
40
MIN
1
+ 4
Typ†
100K
100
10
4
Max
12.5
5.5
5.5
5.5
Units
Year Provided no other
E/W -40°C to +85°C
mA
ms
ms
V
V
V
V
A
≤ +85°C for industrial
© 2009 Microchip Technology Inc.
(Note 2)
V
voltage
Using ICSP™ port
Using ICSP port
V
V
specifications are violated
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
Conditions

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