AH342-PL-B Diodes Inc, AH342-PL-B Datasheet - Page 5

• Manufacturer Part Number: AH342-PL-B
• Description: IC HALL EFFECT LATCH 7.4MA SIP4L
• Manufacturer: Diodes Inc
• Type: Bipolar Latchr

Specifications of AH342-PL-B

• Sensing Range: 150G Trip, -150G Release
• Voltage - Supply: 4.5 V ~ 28 V
• Current - Supply: 7mA
• Current - Output (max): 8.5mA
• Output Type: Digital, Push-Pull
• Features: Regulated Voltage
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 4-SIP
• Operational Type: Hall Effect Latch
• Operating Supply Voltage: 5 V or 9 V or 12 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Maximum Output Current: 10 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: AH342-PL-BDI

Magnetic Characteristics
Notes:
Performance Characteristics
AH342 Rev. 3
Symbol
Bop
Bhy
Brp
5. All the parameters are tested under the 25
6. The magnetic field strength (gauss) required to cause the switch to change state (operate and release) will be as specified in the magnetic
P
P
T
T
characteristics. To test the switch against the specified magnetic characteristics the switch must be placed in a uniform magnetic field.
P
D
D
A
A
D
(mW)
(mW)
(°C)
(°C)
(m W )
N
Characteristic
Operate Point
Release Point
Turn off
V
Hysteresis
( Magnetic flux density B )
cc
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
( off-state )
0
B
0
rp
550
105
198
25
DO
0
B
hy
B
op
2 5
440
110
176
50
Vs=12Vdc ± 0.5%Vdc
o
( on-state )
C only. The operation temperature (-40
-120
Min
120
Turn on
(T
P o w e r D issip a tio n C u rve
40
A
V
24
www.diodes.com
sat
= +25°C) (Note 5, 6)
o
ACTIVE HIGH/LOW COMPLEMENTARY OUTPUT
396
115
154
C ± 2
60
5 0
S
5 of 8
o
C
352
132
120
Max
70
120
200
-40
N
7 5
( on-state )
Turn on
V
( Magnetic flux density B )
sat
308
125
110
80
o
C to 125
B
rp
1 0 0
Vs=4.5Vdc to 28Vdc
-150
o
Min
120
C) is guaranteed by design, it is typical value.
DOB
30
-40
286
130
0
85
88
B
( off-state )
o
hy
C to 125
B
HALL-EFFECT LATCH
op
1 2 5
264
Turn oFF
135
90
66
( 1mT = 10 Gauss )
V
o
cc
C
Max
150
200
©
-30
T
JANUARY 2009
A
Diodes Incorporated
S
242
140
(。 C )
1 5 0
95
44
AH342
Gauss
Gauss
Gauss
Unit
220
100
150
0