MX887PHTTR IXYS, MX887PHTTR Datasheet - Page 190

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MX887PHTTR

Manufacturer Part Number
MX887PHTTR
Description
IC HALL EFFECT SW UPWR TSOT23-3
Manufacturer
IXYS
Type
Omnipolar Switchr
Datasheets

Specifications of MX887PHTTR

Sensing Range
±60G Trip, ±6G Release
Voltage - Supply
2.5 V ~ 5.5 V
Current - Supply
2mA
Current - Output (max)
5mA
Output Type
CMOS, Push-Pull
Operating Temperature
-40°C ~ 85°C
Package / Case
TSOT-23-3, TSOT-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Direct Copper Bonded Ceramic Substrates
DCB Ceramic Substrates (Al
IXYS manufactures Direct Copper Bonded substrates on aluminum oxide (Al
substrates form the basis for new product ideas and electronic developments with a high degree of integration.
Standard bonded DCB panel dimensions are:
DCB parts are available as: • bonded plate
ALN - DCB on request
*
168
Unclad aluminum oxide ceramic
Conduction layers - both sides
DCB ceramic substrate
Al
dimensions
usable area
thickness
arc through voltage
thermal conductivity
copper thickness
conductor width
conductor spacing
spacing conductor/edge of ceramic
surface finishes available
peel-off resistance (DIN 532282)
application temperature range
resistant to hydrogen
thermal expansion coefficient
dimensions according
to customer specific drawing
= (for 0.25 mm thk.)
2
O
3
content
2
O
• bonded and patterned plate
• prelasered, unbroken plate
• individuale substrates
3
or AlN)
Patterned DCB substrates can be manufactured to customers‘ drawings.
DCB ceramic substrates fulfill several functions:
- carriers for the semiconductor chips and connection clips
- circuits similar to that on a PC board
- electrical isolator for separating the „current paths“ from the „heat paths“
- transfer medium for the heat dissipation from the active parts into the heat sink.
max. up to
typical
max.
min.
min.
min.
min.
128 x 210, 138 x 190.5, 115 x 165*
130 x 180, 130 x 200, 107 x 156*
bare copper; nickel plated;
0.3 (< 0.3 on request)
1.00, 0.63, 0.38, 0.25
nickel + gold plated
2
O
3
) or aluminum nitride (AlN) base. DCB ceramic
0.35 + / - 0.2
0.3 + / - 0.2
0.4 + / - 0.2
-55...+850
7.4 x 10-6
> 96
> 24
400
10
9
W/m · K
N/mm
mm
mm
mm
mm
mm
mm
mm
K-1
kV
°C
°C
%

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