TC6501P120VCTTRG Microchip Technology, TC6501P120VCTTRG Datasheet - Page 3

• Manufacturer Part Number: TC6501P120VCTTRG
• Description: IC TEMP SWTCH OPEN DRAIN SOT23-5
• Manufacturer: Microchip Technology

Specifications of TC6501P120VCTTRG

• Sensing Temperature: 120°C Trip Point
• Output Type: Active Low/Open Drain
• Voltage - Supply: 2.7 V ~ 5.5 V
• Accuracy: ±0.5°C
• Package / Case: SC-74A, SOT-753
• Temperature Threshold: + 120 C
• Full Temp Accuracy: 6 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Temperature: + 135 C
• Minimum Operating Temperature: - 55 C
• Supply Current: 40 uA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC6501P120VCTTRG; TC6501P120VTR

1.0
Absolute Maximum Ratings†
Input Voltage (V
Output Voltage (OUT to GND) ................................. 6V
Voltage On Any Pin ....... (GND – 0.3V) to (V
Operating Temperature Range ......... –40 C to +125 C
Storage Temperature ........................ –65 C to +150 C
DC CHARACTERISTICS
 2004 Microchip Technology Inc.
Electrical Specifications: Unless otherwise specified, V
Supply Voltage
Supply Current
SHDN Input
SHDN Input High Threshold
SHDN Input Low Threshold
PWM Output
PWM Output Low Voltage
PWM Output High Voltage
PWM Rise Time
PWM Fall Time
PWM Frequency
Start-up Time
Temperature Accuracy
High Temperature Accuracy
Temperature Range Accuracy (T
Auto-shutdown Hysteresis
T
T
T
Absolute Accuracy
Trip Point Hysteresis
Note 1:
OVER
OVER
OVER
Output
Output High Voltage
Output Low Voltage
ELECTRICAL
CHARACTERISTICS
Parameters
Transition from 90% to 100% Duty Cycle.
DD
to GND) ................................... +6V
T
T
OVER HYST
t
H –
OVER ACC
STARTUP
T
T
V
V
Sym
f
V
H ACC
V
V
I
V
HYST
V
OUT
HIGH
LOW
DD
t
t
T
OH
DD
OL
R
IH
F
IL
L
)
ACC
DD
+ 0.3V)
V
V
DD
DD
T
–1.0
–2.5
Min
H
2.8
65
10
—
—
—
—
—
—
—
—
—
—
– 0.5
– 0.5
– 3
DD
(T
T
32/f
H
= 2.8V to 5.5V, SHDN = V
H
Typ
T
—
50
—
—
10
10
15
—
—
—
—
-T
—
—
+ 10
5
† Notice: Stresses above those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the
device at these or any other conditions above those indicated
in the operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
H
OUT
L
)/5
T
Max
+1.0
+2.5
H
5.5
0.3
0.4
90
15
—
—
—
—
—
—
—
—
—
—
+ 3
%V
%V
Units
sec
µA
°C
°C
°C
°C
°C
°C
Hz
µs
µs
V
V
V
V
V
DD
DD
TC650/TC651
DD
PWM, T
I
I
I
PWM to GND
I
PWM to GND
V
or SHDN Released
Note 1
(T
(T
TC651 Only
I
I
At Trip Point
SINK
SOURCE
OH
OL
SOURCE
SINK
DD
H
H
, T
= 1 mA, 1 nF from
= 5 mA, 1 nF from
– T
– T
Rises from GND
A
= 1 mA
= 2.5 mA
= –40 C to +125 C.
L
L
OVER
)
)
= 5 mA
= 1.2 mA
Conditions
20 C
20 C
are open
DS21450C-page 3