MCP4431-104E/ML Microchip Technology, MCP4431-104E/ML Datasheet - Page 8

• Manufacturer Part Number: MCP4431-104E/ML
• Description: IC POT 100K QUAD 7BIT 20QFN
• Manufacturer: Microchip Technology

Specifications of MCP4431-104E/ML

• Package / Case: 20-VFQFN Exposed Pad
• Resistance (ohms): 100K
• Taps: 129
• Number Of Circuits: 4
• Temperature Coefficient: *
• Memory Type: Volatile
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Pots: Quad
• Taps Per Pot: 129
• Resistance: 100 KOhms
• Wiper Memory: Volatile
• Digital Interface: I2C
• Operating Supply Voltage: 1.8 V to 5.5 V
• Supply Current: 600 uA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MCP443X/5X
AC/DC CHARACTERISTICS (CONTINUED)
DS22267A-page 8
DC Characteristics
Rheostat Integral
Non-linearity
MCP44X1
(Note
MCP44X2 devices
only
Note 1:
Parameters
(Note
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network.
11: When HVC/A0 = V
4,
Note
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP44X1 only.
MCP44X2 only, includes V
Polarity of resistor terminals A, W and B, with respect to each other, is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP44X1 is externally connected to match the configurations of the MCP44X2, and then tested.
POR/BOR is not rate dependent.
4)
8)
R-INL
Sym
IHH
, the I
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
-1.125
-1.125
-1.125
-1.125
WZSE
-8.25
DD
Min
-1.5
-6.0
-1.5
-5.5
-4.0
-1.5
-2.0
-1.5
-1.0
-1.5
-0.8
= +2.7V to 5.5V, 5 k, 10 k, 50 k, 100 k devices.
current is less due to current into the HVC/A0 pin. See I
W
and V
with V
+0.25
+0.25
±0.5
+4.5
±0.5
+4.5
±0.5
+2.5
±0.5
+2.5
±0.5
±0.5
±0.5
±0.5
Typ
WFSE
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
+1
+1
A
= V
.
DD
+1.125
+1.125
+1.125
+1.125
W
+8.25
Max
+1.5
+6.0
+1.5
+5.5
+4.0
+1.5
+2.0
+1.5
+1.0
+1.5
+0.8
), which changes significantly over voltage and
and V
–40°C  T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
SS
.
A
5 k
10 k
50 k
100 k 8-bit
 +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
7-bit
7-bit
8-bit
8-bit
7-bit
 2010 Microchip Technology Inc.
Conditions
A
= +25°C.
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
5.5V, I
3.0V, I
(Note
1.8V, I
PU
specification.
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
7)
7)
7)
7)
7)
7)
7)
7)
= 900 µA
= 480 µA
= 190 µA
= 900 µA
= 480 µA
= 190 µA
= 450 µA
= 240 µA
= 150 µA
= 450 µA
= 240 µA
= 150 µA
= 90 µA
= 48 µA
= 30 µA
= 90 µA
= 48 µA
= 30 µA
= 45 µA
= 24 µA
= 15 µA
= 45 µA
= 24 µA
= 15 µA