STM32F101RGT6 STMicroelectronics, STM32F101RGT6 Datasheet - Page 36
STM32F101RGT6
Manufacturer Part Number
STM32F101RGT6
Description
MCU 32BIT 1MB FLASH 64LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F101VGT6.pdf
(108 pages)
Specifications of STM32F101RGT6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, LCD, POR, PWM, WDT
Number Of I /o
51
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
80K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
STM32F101xG
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
80 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
112
Number Of Timers
15
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 105 C
Processor To Be Evaluated
STM32F101RG
Supply Current (max)
28 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-11112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F101RGT6
Manufacturer:
STMicroelectronics
Quantity:
135
Company:
Part Number:
STM32F101RGT6
Manufacturer:
STMicroelectronics
Quantity:
1
Company:
Part Number:
STM32F101RGT6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM32F101RGT6
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
5.1.7
5.2
36/108
Current consumption measurement
Figure 10. Current consumption measurement scheme
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in
Table 8: Current
damage to the device. These are stress ratings only and functional operation of the device
at these conditions is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Table 7.
1. All main power (V
2. Positive injection is not possible on these I/Os. V
3. I
|V
V
V
SSX
Symbol
supply, in the permitted range.
never be exceeded. A negative injection is induced by V
cannot be respected, the injection current must be limited externally to the I
injection is induced by V
DD
|V
ESD(HBM)
INJ(PIN)
V
V
DDx
IN
V
SS
|
SS
must never be exceeded. This is implicitly insured if V
|
Voltage characteristics
External main supply voltage (including
V
Input voltage on five volt tolerant pin
Input voltage on any other pin
Variations between different V
Variations between all the different ground
pins
Electrostatic discharge voltage (human body
model)
DDA
characteristics, and
DD
and V
, V
DDA
IN
>V
DD
) and ground (V
DD
)
(1)
while a negative injection is induced by V
Ratings
Doc ID 17143 Rev 2
Table 9: Thermal characteristics
I DD _V BAT
SS
, V
I DD
(3)
DD
SSA
IN
power pins
maximum must always be respected. I
) pins must always be connected to the external power
V DD
V DDA
V BAT
(2)
IN
<V
SS
IN
.
maximum is respected. If V
Table 7: Voltage
see
maximum ratings (electrical
ai14126
V
V
SS
SS
Section 5.3.12: Absolute
–0.3
STM32F101xF, STM32F101xG
Min
0.3
0.3
IN
<V
INJ(PIN)
sensitivity)
SS
may cause permanent
value. A positive
V
characteristics,
DD
Max
4.0
4.0
50
50
+4 V
INJ(PIN)
IN
maximum
must
Unit
mV
V