SE3470-001 Honeywell Sensing and Control, SE3470-001 Datasheet
SE3470-001
Specifications of SE3470-001
Available stocks
Related parts for SE3470-001
SE3470-001 Summary of contents
Page 1
... DESCRIPTION The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current ...
Page 2
... SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡ ...
Page 3
... Angular displacement - degrees Fig. 4 Forward Voltage vs Forward Current gra_018.ds4 1.6 1.5 1.4 1.3 1.2 1.1 1.0 400 500 0 20 Fig. 6 Coupling Characteristics SE3470 with SD3443 gra_025.ds4 1.0 0.8 0.6 0.4 0.2 0.0 100 125 0.0 0.2 Window-to-window distance - inches gra_023.ds4 -20 -10 0 +10 +20 +30 +40 gra_026 ...
Page 4
... SE3470/5470 AlGaAs Infrared Emitting Diode Fig. 7 Spectral Bandwidth 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 760 800 840 880 920 Wavelength - nm Fig. 9 Coupling Characteristics SE5470 with SD5443 1.0 0.8 0.6 0.4 0.2 0 Lens-to-lens distance - inches All Performance Curves Show Typical Values ...