SE5470-002 Honeywell Sensing and Control, SE5470-002 Datasheet
![DIODE IR EMITTING ALGAAS TO46](/photos/8/0/80003/se3470-003_se5470-003_se5470-004_se5455-003_sml.jpg)
SE5470-002
Specifications of SE5470-002
Related parts for SE5470-002
SE5470-002 Summary of contents
Page 1
... The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current ...
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SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 ...
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... Temperature 1.70 1.65 1.60 1.55 1.50 1.45 I 1.40 1.35 1.30 -50 - Temperature - C 34 Fig. 2 Radiant Intensity vs Angular Displacement (SE5470) gra_017.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 Angular displacement - degrees Fig. 4 Forward Voltage vs Forward Current gra_018.ds4 1.6 1 ...
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... Wavelength - nm Fig. 9 Coupling Characteristics SE5470 with SD5443 1.0 0.8 0.6 0.4 0.2 0 Lens-to-lens distance - inches All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible ...