SMAJ550-E3/61 Vishay, SMAJ550-E3/61 Datasheet

TVS DIODE, 300W, 550V, DO-214AC

SMAJ550-E3/61

Manufacturer Part Number
SMAJ550-E3/61
Description
TVS DIODE, 300W, 550V, DO-214AC
Manufacturer
Vishay
Series
TransZorb®r
Datasheets

Specifications of SMAJ550-E3/61

Reverse Stand-off Voltage Vrwm
495V
Breakdown Voltage Range
550V
Clamping Voltage Vc Max
760V
Diode Configuration
Unidirectional
Diode Case Style
DO-214AC
No. Of Pins
2
Power Dissipation Pd
2.5W
Package / Case
DO-214AC, SMA
Power (watts)
300W
Polarization
Unidirectional
Voltage - Breakdown
550V
Voltage - Reverse Standoff (typ)
495V
Polarity
Unidirectional
Channels
1 Channel
Clamping Voltage
760 V
Operating Voltage
495 V
Breakdown Voltage
550 V
Termination Style
SMD/SMT
Peak Surge Current
300 A
Peak Pulse Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
2.79(Max) mm W x 4.5(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SMAJ550-E3/5A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SMAJ550-E3/61
Manufacturer:
VISHAY
Quantity:
54 000
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Notes:
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2
(2) Mounted on 5.0 mm
(3) Lead temperature at T
(4) Peak pulse power waveform is 10/1000 µs
Document Number: 88391
Revision: 20-Sep-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Power dissipation on infinite heatsink
Peak pulse power dissipation
Stand-off voltage
Operating junction and storage temperature range
Surface Mount T
T
P
J
I
V
FSM
P
PPM
max.
BR
D
2
DO-214AC (SMA)
copper pads to each terminal
L
= 75 °C
(1)(2)(4)
A
(Fig. 1)
= 25 °C unless otherwise noted)
(3)
RANS
530 V, 550 V
150 °C
300 W
2.5 W
40 A
Z
ORB
®
Transient Voltage Suppressors
FEATURES
APPLICATION NOTES
SYMBOL
• Clamping voltage is influenced by internal resistance
• Glass passivated chip junction
• Available in uni-directional polarity only
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
• Respect thermal resistance (PCB Layout) - as the
• Select minimum breakdown voltage, so you get
• Devices with higher breakdown voltage will have a
• Keep temperature of TVS lower than TOPSwitch
• Maximum current is determined by the maximum
• Contact supplier for different clamping voltage/
• Minimum breakdown voltage can be customized for
• TOPSwitch is a registered trademark of Power
T
J
P
V
, T
P
of 260 °C
and WEEE 2002/96/EC
temperature coefficient also contributes to the
clamping voltage
acceptable power dissipation and PCB tie point
temperature
shorter conduction time and will dissipate less
power
- design approximation is 7 V per 100 mA slope
as a recommendation
T
current arrangements
other applications. Contact supplier
Integrations, Inc.
PPM
WM
D
J
STG
and can be higher than 300 mA
Vishay General Semiconductor
SMAJ530
477
HD
SMAJ530 & SMAJ550
- 55 to + 150
300
2.5
SMAJ550
495
SB
www.vishay.com
UNIT
°C
W
W
V
35
®

Related parts for SMAJ550-E3/61

SMAJ550-E3/61 Summary of contents

Page 1

... Minimum breakdown voltage can be customized for other applications. Contact supplier • TOPSwitch is a registered trademark of Power Integrations, Inc. SYMBOL PPM STG SMAJ530 & SMAJ550 Vishay General Semiconductor SMAJ530 SMAJ550 UNIT HD SB 2.5 300 477 495 - 150 www.vishay.com ® ° ...

Page 2

... SMAJ530 & SMAJ550 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Minimum breakdown voltage at 100 µA Max. clamping voltage at 400 mA, 10/1000 µs-waveform Maximum DC reverse leakage current at V Typical temperature coefficient (1) Typical capacitance at 200 V Note: (1) Measured at 1 MHz THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance, junction to lead ...

Page 3

... Cathode Band 0.066 (1.68) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) 0 (0) SMAJ530 & SMAJ550 Vishay General Semiconductor Mounting Pad Layout 0.074 (1.88) MAX. MIN. 0.060 (1.52) MIN. 0.208 (5.28) REF. www.vishay.com 37 ...

Page 4

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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