SMBJ12A Taiwan Semiconductor, SMBJ12A Datasheet - Page 2

• Manufacturer Part Number: SMBJ12A
• Description: DIODE, TVS, 12V, 600W, SMB
• Manufacturer: Taiwan Semiconductor

Specifications of SMBJ12A

• Reverse Stand-off Voltage Vrwm: 12V
• Breakdown Voltage Range: 13.3V To 14.7V
• Clamping Voltage Vc Max: 19.9V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 31A
• Diode Case Style: SMB
• No. Of: RoHS Compliant

100
100
1.0
150
0.1
10
50
0
0.1 s
0
FIG.1- PEAK PULSE POWER RATING CURVE
FIG.3- PULSE WAVEFORM
0.2" sq 5.0mm COPPER PAD AREAS
td
1.0 s
2
tr=10 sec.
PEAK VALUE
lppm
1.0
RATINGS AND CHARACTERISTIC CURVES (SMBJ SERIES)
td. PULSE WIDTH, sec.
t, TIME, ms
10 s
PULSE WIDTH (td) is DEFINED
AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
HALF VALUE- lpp
2.0
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
100 s
2
3.0
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T =25 C
A
1.0ms
0
10ms
- 365 -
4.0
6,000
1,000
100
200
100
100
10
10
75
50
25
0
1.0
FIG.5- TYPICAL JUNCTION CAPACITANCE
0
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
FIG.2- PULSE DERATING CURVE
VWM, REVERSE STAND-OFF VOLTAGE. (V)
2
VR MEASURED AT
STAND-OFF
VOLTAGE,V
SURGE CURRENT
25
50
NUMBER OF CYCLES AT 60Hz
WM
TA, AMBIENT TEMPERATURE. C
10
75
20
8.3ms Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
MEASURED AT
ZERO BIAS
100
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
10
0
100
125
200
O
150
175
200
100