SMCJ33A Taiwan Semiconductor, SMCJ33A Datasheet - Page 2

DIODE, TVS, 33V, 1500W, SMC

SMCJ33A

Manufacturer Part Number
SMCJ33A
Description
DIODE, TVS, 33V, 1500W, SMC
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of SMCJ33A

Reverse Stand-off Voltage Vrwm
33V
Breakdown Voltage Range
36.7V To 40.6V
Clamping Voltage Vc Max
53.3V
Diode Configuration
Unidirectional
Peak Pulse Current Ippm
29A
Diode Case Style
SMC
No. Of
RoHS Compliant

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10000
1000
100
100
100
1.0
150
0.1
10
10
50
0
0.1 s
0
1
FIG.1- PEAK PULSE POWER RATING CURVE
FIG.3- PULSE WAVEFORM
FIG.5- TYPICAL JUNCTION CAPACITANCE
0.31X0.31" (8.0X8.0mm) COPPER PAD AREAS
VWM, REVERSE STAND-OFF VOLTAGE. (V)
MEASURED AT
STAND-OFF
VOLTAGE,V
td
1.0 s
tr=10 sec.
BIDIRECTIONAL
PEAK VALUE
lppm
1.0
WM
RATINGS AND CHARACTERISTIC CURVES (SMCJ SERIES)
10
td. PULSE WIDTH, sec.
t, TIME, ms
10 s
PULSE WIDTH (td) is DEFINED
AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
HALF VALUE- lpp
2.0
MEASURED AT
ZERO BIAS
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100 s
100
0
2
3.0
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T =25 C
A
1.0ms
400
0
10ms
- 369 -
4.0
20,000
10,000
1,000
100
200
100
100
10
10
75
50
25
0
1
FIG.6- TYPICAL JUNCTION CAPACITANCE
0
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
FIG.2- PULSE DERATING CURVE
VWM, REVERSE STAND-OFF VOLTAGE. (V)
VR MEASURED AT
STAND-OFF
VOLTAGE,V
SURGE CURRENT
25
50
NUMBER OF CYCLES AT 60Hz
WM
TA, AMBIENT TEMPERATURE. C
10
75
8.3ms Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
100
10
MEASURED AT
ZERO BIAS
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100
125
0
O
150
400
175
200
100

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