SMCJ6.0A STMicroelectronics, SMCJ6.0A Datasheet - Page 4

• Manufacturer Part Number: SMCJ6.0A
• Description: DIODE, TVS, 6V, 1500W
• Manufacturer: STMicroelectronics

Specifications of SMCJ6.0A

• Reverse Stand-off Voltage Vrwm: 6V
• Breakdown Voltage Range: 6.7V
• Clamping Voltage Vc Max: 13.7V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 730A
• Diode Case Style: SMC
• No. Of Pins: 2
• Power: RoHS Compliant

SMCJxxxA-TR, CA-TR
Fig. 5-1: Capacitance versus reverse applied volt-
age (typical values) (SMCJxxA serie).
10.00
Fig. 6: Peak forward voltage drop versus peak for-
ward current (typical values).
200.0
100.0
Fig. 8: Thermal resistance junction to ambient ver-
sus copper surface under each lead
(Printed circuit board FR4, e(Cu)=35 m)
100
4/5
1.00
0.10
0.01
10.0
90
80
70
60
50
40
1.0
0.1
0
Rth(j-a) (°C/W)
0.5
1
C(nF)
IFM(A)
Tj=125°C
1.0
1
Tj=25°C
1.5
SMCJ5.0A
2
10
VFM(V)
S(cm²)
VR(V)
2.0
SMCJ18A
3
SMCJ33A
2.5
SMCJ58A
4
3.0
100
F=1MHz
SMCJ188A
200
3.5
5
Fig. 5-2: Capacitance versus reverse applied volt-
age (typical values) (SMCJxxCA serie).
10.00
Fig. 7: Relative variation of thermal impedance
junction to ambient versus pulse duration.
(Printed circuit board FR4, S(Cu)=1cm
1.00
0.10
0.01
Fig. 9: Relative variation of leakage current versus
junction temperature.
2E+3
1E+3
1E+2
1E+1
1E+0
1E-1
1.00
0.10
0.01
1E-2
Zth(j-a)/Rth(j-a)
0
1
IR[Tj] / IR [Tj=25°C]
C(nF)
25
1E-1
SMCJ5.0CA
50
1E+0
10
tp(s)
VR(V)
Tj(°C)
SMCJ18CA
75
1E+1
VBR upper or
equal to 8.5V
SMCJ33CA
100
VBR<8.5V
SMCJ58CA
2
).
1E+2
125
100
F=1MHz
SMCJ188CA
5E+2
200
150