GSOT12C-GS18 Vishay, GSOT12C-GS18 Datasheet - Page 7
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GSOT12C-GS18
Manufacturer Part Number
GSOT12C-GS18
Description
TVS DIODE ARRAY, 504W, 12V, SOT-23
Manufacturer
Vishay
Datasheet
1.GSOT04C-GS08.pdf
(11 pages)
Specifications of GSOT12C-GS18
Reverse Stand-off Voltage Vrwm
12V
Breakdown Voltage Range
15V
Clamping Voltage Vc Max
26V
Diode Configuration
Bidirectional
Peak Pulse Current Ippm
12A
Diode Case Style
SOT-23
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (V
voltage (V
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
Document Number: 85824
Rev. 2.0, 22-Jul-10
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
BR
) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
For technical questions, contact:
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
Two-Line ESD-Protection in SOT-23
at V
at V
at V
at V
at V
at V
at I
at I
at I
at I
at I
at I
R
R
R
R
R
R
PP
PP
= 7.5 V; f = 1 MHz
at V
at I
at V
at I
at V
at I
PP
PP
PP
PP
= 12 V; f = 1 MHz
= 18 V; f = 1 MHz
at I
at I
at I
at I
at I
at I
at I
at I
at I
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= I
= I
= I
= I
= I
= I
R
R
R
R
PP
PP
R
PP
PP
R
PP
PP
R
R
R
PPM
PPM
= 1 mA
= 1 mA
= 1 mA
= 1 μA
= 1 μA
= 1 μA
PPM
PPM
PPM
PPM
= 15 V
= 24 V
= 36 V
= 1 A
= 1 A
= 1 A
= 1 A
= 1 A
= 1 A
= 3.5 A
= 3.5 A
= 8 A
= 8 A
= 5 A
= 5 A
ESDprotection@vishay.com
SYMBOL
SYMBOL
SYMBOL
N
N
N
V
V
V
channel
channel
channel
V
V
V
RWM
V
C
RWM
V
C
RWM
V
C
V
V
V
I
I
I
BR
BR
BR
R
R
R
C
F
D
C
F
D
C
F
D
GSOT03C to GSOT36C
MIN.
MIN.
MIN.
16.5
15
24
27
36
39
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Semiconductors
C
) is defined by the breakthrough
TYP.
TYP.
TYP.
19.4
24.8
1.8
1.4
1.3
18
90
35
30
34
41
65
20
43
49
59
52
12
1
1
1
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
23.5
28.8
120
1.2
1.2
1.2
41
47
80
60
71
65
2
1
2
1
2
1
-
-
-
-
-
-
-
-
-
-
-
-
www.vishay.com
UNIT
UNIT
UNIT
lines
lines
lines
μA
μA
μA
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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