GSOT24C-GS18 Vishay, GSOT24C-GS18 Datasheet - Page 7

• Manufacturer Part Number: GSOT24C-GS18
• Description: TVS DIODE ARRAY, 504W, 24V, SOT-23
• Manufacturer: Vishay

Specifications of GSOT24C-GS18

• Reverse Stand-off Voltage Vrwm: 24V
• Breakdown Voltage Range: 30V
• Clamping Voltage Vc Max: 1.4V
• Diode Configuration: Bidirectional
• Peak Pulse Current Ippm: 5A
• Diode Case Style: SOT-23
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (V
voltage (V
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
Document Number: 85824
Rev. 2.0, 22-Jul-10
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
BR
) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
For technical questions, contact:
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
Two-Line ESD-Protection in SOT-23
at V
at V
at V
at V
at V
at V
at I
at I
at I
at I
at I
at I
R
R
R
R
R
R
PP
PP
= 7.5 V; f = 1 MHz
at V
at I
at V
at I
at V
at I
PP
PP
PP
PP
= 12 V; f = 1 MHz
= 18 V; f = 1 MHz
at I
at I
at I
at I
at I
at I
at I
at I
at I
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= I
= I
= I
= I
= I
= I
R
R
R
R
PP
PP
R
PP
PP
R
PP
PP
R
R
R
PPM
PPM
= 1 mA
= 1 mA
= 1 mA
= 1 μA
= 1 μA
= 1 μA
PPM
PPM
PPM
PPM
= 15 V
= 24 V
= 36 V
= 1 A
= 1 A
= 1 A
= 1 A
= 1 A
= 1 A
= 3.5 A
= 3.5 A
= 8 A
= 8 A
= 5 A
= 5 A
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SYMBOL
SYMBOL
SYMBOL
N
N
N
V
V
V
channel
channel
channel
V
V
V
RWM
V
C
RWM
V
C
RWM
V
C
V
V
V
I
I
I
BR
BR
BR
R
R
R
C
F
D
C
F
D
C
F
D
GSOT03C to GSOT36C
MIN.
MIN.
MIN.
16.5
15
24
27
36
39
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Semiconductors
C
) is defined by the breakthrough
TYP.
TYP.
TYP.
19.4
24.8
1.8
1.4
1.3
18
90
35
30
34
41
65
20
43
49
59
52
12
1
1
1
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
23.5
28.8
120
1.2
1.2
1.2
41
47
80
60
71
65
2
1
2
1
2
1
-
-
-
-
-
-
-
-
-
-
-
-
www.vishay.com
UNIT
UNIT
UNIT
lines
lines
lines
μA
μA
μA
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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