MBR10100CT MULTICOMP, MBR10100CT Datasheet - Page 2

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MBR10100CT

Manufacturer Part Number
MBR10100CT
Description
DIODE, SCHOTTKY, 10A, 100V
Manufacturer
MULTICOMP
Datasheet

Specifications of MBR10100CT

Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
10A
Forward Voltage Vf Max
950mV
Forward Surge Current Ifsm Max
120A
Diode Configuration
Dual Common Cathode
Diode Type
Schottky
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes: 1. 2.0
Maximum Ratings and Electrical Characteristics
Operating Junction Temperature Range
Storage Temperature Range
MBR10xCT Series
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
Peak Repetitive Forward Current (Rated V
Square Wave, 20KHz) at T
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
Maximum Instantaneous Reverse Current
at T
at T
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, (Note 3)
C
C
C
2. Pulse Test: 300
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
= 125°C
= 25°C at Rated DC Blocking Voltage
= 125°C (Note 2)
µ
s Pulse Width, f = 1.0KHz.
Type Number
I
I
I
I
F
F
F
F
µ
= 5A, T
= 5A, T
= 10A, T
= 10A, T
s Pulse Width, 1% Duty Cycle.
C
= 125°C
C
C
R
C
C
)
= 125°C
= 25°C
= 25°C
= 125°C
R
,
Symbol
V
V
dV/dt
I
I
R
I
I
T
V
FRM
RRM
FSM
V
RRM
RMS
T
(AV)
I
θJC
STG
DC
R
F
J
Page <2>
MBR
1045
0.70
0.57
0.80
0.67
CT
45
31
45
15
MBR
1060
0.80
0.65
0.90
0.75
CT
60
42
60
10
1.0
-65 to +150
-65 to +175
10,000
10100
MBR
0.85
0.75
0.95
0.85
100
100
120
CT
0.1
1.5
70
10
32
10150
MBR
150
105
150
CT
2.0
0.88
0.78
0.98
0.88
10200
MBR
200
140
200
CT
0.5
23/07/08 V1.1
Units
°C/W
V/µS
µA
°C
V
A
V

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